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quality Powerful N Channel MOSFET MIRACLE POWER MS4004Y with 120A Continuous Drain Current and 40V Voltage factory
quality Powerful N Channel MOSFET MIRACLE POWER MS4004Y with 120A Continuous Drain Current and 40V Voltage factory

Powerful N Channel MOSFET MIRACLE POWER MS4004Y with 120A Continuous Drain Current and 40V Voltage

Key Attributes
Model Number: MS4004Y
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
120A
RDS(on):
2.6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
110pF
Input Capacitance(Ciss):
2.8nF
Output Capacitance(Coss):
1.07nF
Pd - Power Dissipation:
72.7W
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
MS4004Y
Package:
PDFN-8(5x6)
Product Description

Product Overview

The MS4004Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced shielded-gate technology. It offers a 40V drain-source voltage and a continuous drain current of 120A with a low RDS(ON) of 2.1m (Typ.) at VGS = 10V. This MOSFET is designed for excellent RDS(ON) and low gate charge, with 100% EAS guaranteed. It is suitable for applications such as motor controllers, DC-to-DC converters, and battery-driven electronic products, electrical equipment, and machines.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Technology: Advanced Shielded-Gate Technology

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage TC = 25C unless otherwise noted - - 40 V
VGS Gate-Source Voltage - - 20 V
ID Drain Current-Continuous TC = 25C - - 120 A
ID Drain Current-Continuous TC = 100C - - 77 A
IDM Drain Current-Pulsed - - 480 A
PD Maximum Power Dissipation @ TJ = 25C - - 72.7 W
EAS Single Pulsed Avalanche Energy - - 225 mJ
TJ, TSTG Operating and Store Temperature Range - -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - - 1.72 C/W
RJA Thermal Resistance, Junction to Ambient - - 45 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 40 - - V
IDSS Zero Gate Voltage Drain Current VDS = 40V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1.1 1.5 2.2 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 20A - 2.1 2.6 m
RDS(on) Static Drain-Source On-Resistance VGS = 4.5V, ID = 20A - 2.8 3.6 m
Dynamic Characteristics
Ciss Input Capacitance VDS = 20V, VGS = 0V, f = 1MHz - 2800 - pF
Coss Output Capacitance - - 1070 - pF
Crss Reverse Transfer Capacitance - - 110 - pF
On Characteristics
td(on) Turn-On Delay Time VDS = 20V, VGS = 10V, ID = 20A, RG = 3 - 4 - ns
tr Turn-On Rise Time - - 5 - ns
td(off) Turn-Off Delay Time - - 35 - ns
tf Turn-Off Fall Time - - 11 - ns
Qg Total Gate Charge VDS = 20V, VGS = 10V, ID = 20A - 46 - nC
Qgs Gate-Source Charge - - 8.7 - nC
Qgd Gate-Drain Charge - - 5.4 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG=VD=0V, Force Current - - 120 A
ISM Maximum Pulsed Current - - 480 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 50A - 0.83 - V
trr Body Diode Reverse Recovery Time IS = 20A, di/dt = 100A/s - 43 - ns
Qrr Body Diode Reverse Recovery Charge IS = 20A, di/dt = 100A/s - 53 - nC

2504151445_MIRACLE-POWER-MS4004Y_C47361190.pdf
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