Power Management N Channel MOSFET Featuring 40V 40A and Low Gate Charge MIRACLE POWER MU4002Y Device
Key Attributes
Model Number:
MU4002Y
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
RDS(on):
14mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
104pF
Pd - Power Dissipation:
35W
Output Capacitance(Coss):
125pF
Input Capacitance(Ciss):
1.915nF
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
MU4002Y
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The MU4002Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 40V drain-source voltage, 40A continuous drain current, and a typical on-resistance of 11m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, utilizing advanced trench technology. It is 100% EAS guaranteed and suitable for applications such as load switching, PWM applications, and power management.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage / Current / RDS(on) | 40V / 40A / 11m | |||||
| Key Advantages | Excellent RDS(on) and Low Gate Charge | |||||
| Technology | Advanced Trench Technology | |||||
| Testing | 100% EAS Guaranteed | |||||
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous (TC = 25C) | 40 | A | |||
| ID | Drain Current-Continuous (TC = 100C) | 25 | A | |||
| IDM | Drain Current-Pulsed | 160 | A | |||
| PD | Maximum Power Dissipation (TC = 25C) | 35 | W | |||
| EAS | Single Pulsed Avalanche Energy | 60 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 3.6 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 37 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 40 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 40V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 1.0 | - | 2.5 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 20A | - | 11 | 14 | m |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 4.5V, ID = 10A | - | 15 | 20 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | TBD | - | |
| Ciss | Input Capacitance | VDS = 20V, VGS = 0V, f = 1.0MHz | - | 1915 | - | pF |
| Coss | Output Capacitance | - | 125 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 104 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 20V, VGS = 10V, ID = 20A, RGEN = 3.0 | - | 8.0 | - | ns |
| tr | Turn-On Rise Time | - | 28 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 36 | - | ns | |
| tf | Turn-Off Fall Time | - | 6.0 | - | ns | |
| Qg | Total Gate Charge | VDS = 20V, VGS = 0 to 10V, ID = 20A | - | 37 | - | nC |
| Qgs | Gate-Source Charge | - | 8.0 | - | nC | |
| Qgd | Gate-Drain Charge | - | 7.0 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 40 | A |
| ISM | Maximum Pulsed Current | - | - | 160 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, dIF/dt = 100A/s | - | 10 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, dIF/dt = 100A/s | - | 5.0 | - | nC |
2504151445_MIRACLE-POWER-MU4002Y_C47361178.pdf
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