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quality MCC SI3404 TP N Channel MOSFET featuring low RDS on and RoHS compliance for electronic applications factory
quality MCC SI3404 TP N Channel MOSFET featuring low RDS on and RoHS compliance for electronic applications factory

MCC SI3404 TP N Channel MOSFET featuring low RDS on and RoHS compliance for electronic applications

Key Attributes
Model Number: SI3404-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
28mΩ@10V,5.8A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
85pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
820pF@15V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
SI3404-TP
Package:
SOT-23
Product Description

Product Overview

The SI3404 is an N-Channel MOSFET designed with a high-density cell structure for extremely low RDS(on). It offers a rugged and reliable performance, meeting UL 94 V-0 flammability rating and Moisture Sensitivity Level 1. This device is available in a lead-free finish and is RoHS compliant. For environmental considerations, a halogen-free option is available upon request.

Product Attributes

  • Brand: MCC (Micro Commercial Components)
  • Product Series: SI3404
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Compliance: RoHS Compliant
  • Halogen Free: Available Upon Request (Suffix "-HF")
  • Package Type: SOT-23

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS - ±20 V
Continuous Drain Current ID Note 1 5.8 A
Pulsed Drain Current IDM Note 2 30 A
Total Power Dissipation PD Note 1 0.35 W
Operating Junction Temperature Range -55 +150 °C
Storage Temperature Range -55 +150 °C
Thermal Resistance Junction to Ambient Note 1 357 °C/W
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA 30 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =±20V ±100 nA
Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 µA
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA 1 3 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=5.8A 28 mΩ
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=4.8A 42 mΩ
Diode Forward Voltage VSD VGS=0V, IS=1A 1 V
Dynamic Characteristics (Note 4)
Forward tranconductance gFS VDS=5V, ID=5.8A 5 S
Input Capacitance Ciss VDS=15V,VGS=0V,f=1MHz 820 pF
Output Capacitance Coss VDS=15V,VGS=0V,f=1MHz 118 pF
Reverse Transfer Capacitance Crss VDS=15V,VGS=0V,f=1MHz 85 pF
Gate Resistance Rg VDS=0V,VGS=0V,f=1MHz 1.5 Ω
Switching Characteristics (Note 4)
Turn-On Delay Time td(on) VGS=10V,VDS=15V, RL=2.6Ω,RGEN=3Ω 6.5 ns
Turn-On Rise Time tr VGS=10V,VDS=15V, RL=2.6Ω,RGEN=3Ω 3.1 ns
Turn-Off Delay Time td(off) VGS=10V,VDS=15V, RL=2.6Ω,RGEN=3Ω 15.1 ns
Turn-Off Fall Time tf VGS=10V,VDS=15V, RL=2.6Ω,RGEN=3Ω 2.7 ns

Notes:

  • Note 1. Surface Mounted on FR4 Board, t<5 sec.
  • Note 2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature.
  • Note 3. Pulse Test: Pulse Width≤300µs, Duty Cycle ≤ 2%.
  • Note 4. Guaranteed by Design, Not Subject to Production Testing.

2410010204_MCC-SI3404-TP_C669005.pdf

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