Silicon Carbide N Channel Power MOSFET MICROCHIP MSC015SMA070B 700 Volt 15 Milliamp for PV Inverters
Key Attributes
Model Number:
MSC015SMA070B
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+175℃
RDS(on):
19mΩ
Gate Threshold Voltage (Vgs(th)):
2.4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF
Input Capacitance(Ciss):
4.5nF
Output Capacitance(Coss):
510pF
Pd - Power Dissipation:
455W
Gate Charge(Qg):
215nC
Mfr. Part #:
MSC015SMA070B
Package:
TO-247
Product Description
Product Overview
The MSC015SMA070B is a 700 V, 15 m Silicon Carbide (SiC) N-Channel Power MOSFET from Microsemi. It offers enhanced performance over traditional silicon MOSFETs and IGBTs, leading to lower total cost of ownership for high-voltage applications. Key benefits include high efficiency for compact systems, ease of driving and paralleling, improved thermal capabilities, and elimination of external freewheeling diodes. This device is designed for applications such as PV inverters, industrial motor drives, smart grid infrastructure, H/EV powertrains, EV chargers, and power supplies.
Product Attributes
- Brand: Microsemi
- Material: Silicon Carbide (SiC)
- Certifications: RoHS compliant
Technical Specifications
| Characteristic | Symbol | Unit | Ratings | Test Conditions |
| Absolute Maximum Ratings | ||||
| Drain source voltage | VDSS | V | 700 | |
| Continuous drain current at TC = 25 C | ID | A | 140 | |
| Continuous drain current at TC = 100 C | ID | A | 99 | |
| Pulsed drain current | IDM | A | 350 | 1 |
| Gate-source voltage | VGS | V | 23 to 10 | |
| Total power dissipation at TC = 25 C | PD | W | 455 | |
| Linear derating factor | W/C | 3.03 | ||
| Thermal and Mechanical Characteristics | ||||
| Junction-to-case thermal resistance | RJC | C/W | 0.33 | Typ |
| Operating junction temperature | TJ | C | 175 | Max |
| Storage temperature | TSTG | C | 150 | 55 |
| Soldering temperature for 10 seconds (1.6 mm from case) | TL | C | 300 | |
| Mounting torque, 6-32 or M3 screw | lbf-in | 10 | ||
| Mounting torque, 6-32 or M3 screw | N-m | 1.1 | ||
| Package weight | Wt | g | 6.2 | Typ |
| Static Characteristics | ||||
| Drain-source breakdown voltage | V(BR)DSS | V | 700 | VGS = 0 V, ID = 100 A |
| Drain-source on resistance | RDS(on) | m | 19 | VGS = 20 V, ID = 40 A |
| Gate-source threshold voltage | VGS(th) | V | 2.4 | VGS = VDS, ID = 4 mA |
| Threshold voltage coefficient | VGS(th)/TJ | mV/C | 3.4 | VGS = VDS, ID = 4 mA |
| Zero gate voltage drain current | IDSS | A | 100 | VDS = 700 V, VGS = 0 V |
| Zero gate voltage drain current | IDSS | nA | 500 | VDS = 700 V, VGS = 0 V, TJ = 125 C |
| Gate-source leakage current | IGSS | nA | 100 | VGS = 20 V/10 V |
| Dynamic Characteristics | ||||
| Input capacitance | Ciss | pF | 4500 | VGS = 0 V, VDD = 700 V, VAC = 25 mV, = 1 MHz |
| Reverse transfer capacitance | Crss | pF | 29 | |
| Output capacitance | Coss | pF | 510 | |
| Total gate charge | Qg | nC | 215 | VGS = 5 V/20 V, VDD = 470 V, ID = 40 A |
| Gate-source charge | Qgs | nC | 58 | |
| Gate-drain charge | Qg d | nC | 35 | |
| Turn-on delay time | td(on) | ns | 20 | VDD = 470 V, VGS = 5 V/20 V, ID = 40 A, Rg(ext) = 2.5 |
| Voltage fall time | tf | ns | 35 | |
| Turn-off delay time | td(off) | ns | 3 | |
| Voltage rise time | tr | ns | 35 | |
| Turn-on switching energy | Eon | J | 420 | VDD = 470 V, VGS = 5 V/20 V, ID = 40 A, Rg(ext) = 2.5 |
| Turn-off switching energy | Eoff | J | 90 | |
| Turn-on delay time | td(on) | ns | 32 | VDD = 470 V, VGS = 5 V/20 V, ID = 40 A, Rg(ext) = 2.5 |
| Voltage fall time | tf | ns | 38 | |
| Turn-off delay time | td(off) | ns | 10 | |
| Voltage rise time | tr | ns | 217 | |
| Turn-on switching energy | Eon | J | 118 | |
| Turn-off switching energy | Eoff | J | ||
| Equivalent series resistance | ESR | 0.69 | f = 1 MHz, 25 mV, drain short | |
| Short circuit withstand time | SCWT | s | 3 | VDS = 560 V, VGS = 20 V |
| Avalanche energy, single pulse | EAS | mJ | 4400 | VDS = 150 V, ID = 40 A |
| Body Diode Characteristics | ||||
| Diode forward voltage | VSD | V | 3.4 | ISD = 40 A, VGS = 0 V |
| Diode forward voltage | VSD | V | 3.8 | ISD = 40 A, VGS = 5 V |
| Reverse recovery time | trr | ns | 40 | ISD = 40 A, VGS = 5 V, VDD = 470 V, dl/dt = 1200 A/s |
| Reverse recovery charge | Qrr | nC | 495 | |
| Reverse recovery current | IRRM | A | 19 | |
2210142000_MICROCHIP-MSC015SMA070B_C3290705.pdf
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