N Channel Power MOSFET MIRACLE POWER MJQ25N60 600V Drain Source Voltage Suitable for Power Supplies
Product Overview
The MJQ25N60 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring Advanced Super Junction Technology for easy gate switching and 100% avalanche testing. It is designed for high-voltage applications, offering a 600V drain-source voltage and a low on-resistance of 139m (typ.) at VGS = 10V. This MOSFET is suitable for power supplies in PCs, adapters, servers, and telecommunications, as well as LCD/PDP TVs, LED lighting, and UPS systems. It is also applicable in boost PFC, single-ended flyback, two-transistor forward, HB, AHB, and LLC topologies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Advanced Super Junction Technology
- Channel Type: N-Channel
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 600 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous (TC = 25C) | 25 | A | |||
| IDM | Drain Current-Pulsed | 75 | A | |||
| PD | Maximum Power Dissipation (TC = 25C) | 195.3 | W | |||
| dv/dt | Peak Diode Recovery dv/dt | 15 | V/ns | |||
| EAS | Single Pulsed Avalanche Energy | 720 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.64 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 605 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 600, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.8 | - | 4.2 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 12.5A | - | 139 | 170 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | - | 5.5 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10kHz | - | 1760 | - | pF |
| Coss | Output Capacitance | - | 176 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 3.79 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, VGS = 13V, ID = 11.3A, RG = 1.7 | - | 8.4 | - | ns |
| tr | Turn-On Rise Time | - | 3.5 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 47.5 | - | ns | |
| tf | Turn-Off Fall Time | - | 10.2 | - | ns | |
| Qg | Total Gate Charge | VDD = 400V, VGS = 10V, ID = 11.3A | - | 37.7 | - | nC |
| Qgs | Gate-Source Charge | - | 8.91 | - | ||
| Qgd | Gate-Drain Charge | - | 13.52 | - | ||
| Drain-Source Diode Characteristics | ||||||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | - | 0.71 | - | V |
| Trr | Body Diode Reverse Recovery Time | VR = 400V, IF = 11.3A, dIF/dt = 100A/s | - | 280.2 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | VR = 400V, IF = 11.3A, dIF/dt = 100A/s | - | 4.109 | - | C |
| Irrm | Peak reverse recovery current | VR = 400V, IF = 11.3A, dIF/dt = 100A/s | - | 29.79 | - | A |
Notes:
a. TJ = +25 to +150 .
b. Repetitive rating: pulse width limited by maximum junction temperature.
c. Pulse width 300s; duty cycle 2%.
d. L = 10mH, VDD = 100V, IAS = 12A, RG = 25 Starting TJ = 25 .
2504151445_MIRACLE-POWER-MJQ25N60_C47361036.pdf
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