N Channel Power MOSFET MIRACLE POWER MJQ25N60 600V Drain Source Voltage Suitable for Power Supplies

Key Attributes
Model Number: MJQ25N60
Product Custom Attributes
Drain To Source Voltage:
605V
Current - Continuous Drain(Id):
25A
RDS(on):
170mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.2V@2250uA
Reverse Transfer Capacitance (Crss@Vds):
3.79pF
Input Capacitance(Ciss):
1.76nF
Output Capacitance(Coss):
176pF
Pd - Power Dissipation:
195.3W
Gate Charge(Qg):
37.7nC@10V
Mfr. Part #:
MJQ25N60
Package:
TO-247
Product Description

Product Overview

The MJQ25N60 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring Advanced Super Junction Technology for easy gate switching and 100% avalanche testing. It is designed for high-voltage applications, offering a 600V drain-source voltage and a low on-resistance of 139m (typ.) at VGS = 10V. This MOSFET is suitable for power supplies in PCs, adapters, servers, and telecommunications, as well as LCD/PDP TVs, LED lighting, and UPS systems. It is also applicable in boost PFC, single-ended flyback, two-transistor forward, HB, AHB, and LLC topologies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Advanced Super Junction Technology
  • Channel Type: N-Channel
  • Testing: 100% Avalanche Tested

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings (TC = 25C unless otherwise noted)
VDS Drain-Source Voltage 600 V
VGS Gate-Source Voltage 30 V
ID Drain Current-Continuous (TC = 25C) 25 A
IDM Drain Current-Pulsed 75 A
PD Maximum Power Dissipation (TC = 25C) 195.3 W
dv/dt Peak Diode Recovery dv/dt 15 V/ns
EAS Single Pulsed Avalanche Energy 720 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.64 C/W
RJA Thermal Resistance, Junction to Ambient 62 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 605 - - V
IDSS Zero Gate Voltage Drain Current VDS = 600, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.8 - 4.2 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 12.5A - 139 170 m
Dynamic Characteristics
RG Gate Resistance f = 1.0MHz - 5.5 -
Ciss Input Capacitance VDS = 50V, VGS = 0V, f = 10kHz - 1760 - pF
Coss Output Capacitance - 176 - pF
Crss Reverse Transfer Capacitance - 3.79 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 400V, VGS = 13V, ID = 11.3A, RG = 1.7 - 8.4 - ns
tr Turn-On Rise Time - 3.5 - ns
td(off) Turn-Off Delay Time - 47.5 - ns
tf Turn-Off Fall Time - 10.2 - ns
Qg Total Gate Charge VDD = 400V, VGS = 10V, ID = 11.3A - 37.7 - nC
Qgs Gate-Source Charge - 8.91 -
Qgd Gate-Drain Charge - 13.52 -
Drain-Source Diode Characteristics
VSD Drain-Source Diode Forward Voltage VGS = 0V, IF = 1A - 0.71 - V
Trr Body Diode Reverse Recovery Time VR = 400V, IF = 11.3A, dIF/dt = 100A/s - 280.2 - ns
Qrr Body Diode Reverse Recovery Charge VR = 400V, IF = 11.3A, dIF/dt = 100A/s - 4.109 - C
Irrm Peak reverse recovery current VR = 400V, IF = 11.3A, dIF/dt = 100A/s - 29.79 - A

Notes:
a. TJ = +25 to +150 .
b. Repetitive rating: pulse width limited by maximum junction temperature.
c. Pulse width 300s; duty cycle 2%.
d. L = 10mH, VDD = 100V, IAS = 12A, RG = 25 Starting TJ = 25 .


2504151445_MIRACLE-POWER-MJQ25N60_C47361036.pdf

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