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quality Switching N Channel Power MOSFET MIRACLE POWER MPF18N20A with 200V Maximum Drain Source Voltage Rating factory
quality Switching N Channel Power MOSFET MIRACLE POWER MPF18N20A with 200V Maximum Drain Source Voltage Rating factory

Switching N Channel Power MOSFET MIRACLE POWER MPF18N20A with 200V Maximum Drain Source Voltage Rating

Key Attributes
Model Number: MPF18N20A
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
RDS(on):
150mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
15pF
Output Capacitance(Coss):
92pF
Pd - Power Dissipation:
44W
Input Capacitance(Ciss):
1.085nF
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
MPF18N20A
Package:
TO-220F
Product Description

Product Overview

The MPF18N20A is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency switching applications. It features a 200V drain-source voltage, 18A continuous drain current, and a low on-resistance of 0.115 (typ.) at VGS = 10V. This MOSFET is characterized by low Crss, fast switching speeds, and is 100% avalanche tested. Key applications include high-efficiency switch mode power supplies, electronic lamp ballasts based on half bridge configurations, and Uninterruptible Power Supplies (UPS).

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Power MOSFET
  • Technology: Miracle Technology

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C unless otherwise noted - - 200 V
VGS Gate-Source Voltage Tc = 25C unless otherwise noted - - 30 V
ID Drain Current-Continuous, TC =25C Tc = 25C unless otherwise noted - - 18 A
ID Drain Current-Continuous, TC =100C Tc = 25C unless otherwise noted - - 10.5 A
IDM Drain Current-Pulsed Tc = 25C unless otherwise noted - - 72 A
PD Maximum Power Dissipation @ TJ =25C Tc = 25C unless otherwise noted - - 44 W
dv/dt Peak Diode Recovery dv/dt Tc = 25C unless otherwise noted - - 5.5 V/ns
EAS Single Pulsed Avalanche Energy Tc = 25C unless otherwise noted - - 423 mJ
TJ, TSTG Operating and Store Temperature Range Tc = 25C unless otherwise noted -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - - - 2.85 C/W
RJA Thermal Resistance, Junction to Ambient - - - 62.5 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 200 - - V
IDSS Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID =250A 2.0 - 4.0 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 9A - 0.115 0.15
Dynamic Characteristics
Ciss Input Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz - 1085 - pF
Coss Output Capacitance - - 92 - pF
Crss Reverse Transfer Capacitance - - 15 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 100V, ID =18A, VGS=10V,RGEN=24 - 15 - ns
tr Turn-On Rise Time - - 46 - ns
td(off) Turn-Off Delay Time - - 58 - ns
tf Turn-Off Fall Time - - 41 - ns
Gate Charge
Qg Total Gate Charge VDS = 100V, ID =18A, VGS = 10V - 25 - nC
Qgs Gate-Source Charge - - 7.3 - nC
Qgd Gate-Drain Charge - - 9.1 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 18 A
ISM Maximum Pulsed Current VGS = 0V - - 72 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 9A - - 1.2 V
Trr Body Diode Reverse Recovery Time IS=18A,VGS = 0V dIF/dt=100A/us - - 195 ns
Qrr Body Diode Reverse Recovery Charge IS=18A,VGS = 0V dIF/dt=100A/us - - 931 nC

2504151445_MIRACLE-POWER-MPF18N20A_C47361029.pdf

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