PNP Bipolar Junction Transistor MDD Microdiode Semiconductor S9012 in SOT23 Package for Electronics
Key Attributes
Model Number:
S9012
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S9012
Package:
SOT-23
Product Description
Product Overview
The S9012 is a PNP bipolar junction transistor housed in a SOT-23 package. It features high collector current and excellent hFE linearity, making it a complementary part to the S9013 transistor. This device is suitable for various electronic applications requiring amplification or switching.
Product Attributes
- Brand: Microdiode
- Package Type: SOT-23
- Marking: 2T1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -25 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current-Continuous | IC | -0.5 | A | |||
| Collector Power Dissipation | PC | 0.3 | W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=-100A, IE=0 | -40 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=-1mA,IB=0 | -25 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=-100A,IC=0 | -5 | V | ||
| Collector Cut-off Current | ICBO | VCB=-40V, IE=0 | -0.1 | A | ||
| Emitter Cut-off Current | IEBO | VEB=-5V, IC=0 | -0.1 | A | ||
| DC Current Gain | hFE(1) | VCE=-1V, IC=-50mA | 120 | 400 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-500mA, IB=-50mA | -0.6 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=-500mA, IB=-50mA | -1.2 | V | ||
| Transition Frequency | fT | VCE=-6V, IC=-20mA, f=30MHz | 150 | MHz | ||
| Collector Output Capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 5 | pF | ||
| Thermal Resistance Junction To Ambient | RJA | 416 | /W |
2411211951_MDD-Microdiode-Semiconductor-S9012_C431711.pdf
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