Microchip MSC015SMA070B Silicon Carbide N Channel Power MOSFET with Simplified Driving and Paralleling
Key Attributes
Model Number:
MSC015SMA070B4
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+175℃
RDS(on):
19mΩ
Gate Threshold Voltage (Vgs(th)):
2.4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF
Input Capacitance(Ciss):
4.5nF
Output Capacitance(Coss):
510pF
Pd - Power Dissipation:
455W
Gate Charge(Qg):
215nC
Mfr. Part #:
MSC015SMA070B4
Package:
TO-247-4
Product Description
Microsemi MSC015SMA070B Silicon Carbide N-Channel Power MOSFET
The Microsemi MSC015SMA070B is a 700 V, 15 m Silicon Carbide (SiC) N-Channel Power MOSFET designed to enhance performance and reduce the total cost of ownership for high-voltage applications compared to traditional silicon MOSFET and IGBT solutions. Its key features include low capacitances, fast switching speeds, stable operation at high junction temperatures (up to 175 C), a fast and reliable body diode, and superior avalanche ruggedness. These attributes enable higher efficiency, leading to lighter and more compact systems, simplified driving and paralleling, improved thermal capabilities, and lower switching losses. The device eliminates the need for an external freewheeling diode, contributing to lower overall system costs. It is RoHS compliant.
Product Attributes
- Brand: Microsemi
- Material: Silicon Carbide (SiC)
- Certifications: RoHS compliant
Technical Specifications
| Characteristic | Symbol | Unit | Min | Typ | Max | Test Conditions |
|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | V | 700 | |||
| Continuous drain current at TC = 25 C | ID | A | 140 | TC = 25 C | ||
| Continuous drain current at TC = 100 C | ID | A | 99 | TC = 100 C | ||
| Pulsed drain current | IDM | A | 350 | 1 | ||
| Gate-source voltage | VGS | V | -10 | 23 | ||
| Total power dissipation at TC = 25 C | PD | W | 455 | TC = 25 C | ||
| Linear derating factor | W/C | 3.03 | ||||
| Junction-to-case thermal resistance | RJC | C/W | 0.22 | 0.33 | ||
| Operating junction temperature | TJ | C | -55 | 175 | ||
| Storage temperature | TSTG | C | -55 | 150 | ||
| Soldering temperature for 10 seconds | TL | C | 300 | 1.6 mm from case | ||
| Mounting torque, 6-32 or M3 screw | N-m | 1.1 | ||||
| Package weight | Wt | g | 6.2 | |||
| Drain-source breakdown voltage | V(BR)DSS | V | 700 | VGS = 0 V, ID = 100 A | ||
| Drain-source on resistance | RDS(on) | m | 15 | 19 | VGS = 20 V, ID = 40 A 1 | |
| Gate-source threshold voltage | VGS(th) | V | 1.9 | 2.4 | VGS = VDS, ID = 4 mA | |
| Threshold voltage coefficient | VGS(th)/TJ | mV/C | -3.4 | VGS = VDS, ID = 4 mA | ||
| Zero gate voltage drain current | IDSS | A | 100 | VDS = 700 V, VGS = 0 V | ||
| Zero gate voltage drain current (high temp) | IDSS | nA | 500 | VDS = 700 V, VGS = 0 V, TJ = 125 C | ||
| Gate-source leakage current | IGSS | nA | 100 | VGS = 20 V/10 V | ||
| Input capacitance | Ciss | pF | 4500 | VGS = 0 V, VDD = 700 V, VAC = 25 mV, = 1 MHz | ||
| Reverse transfer capacitance | Crss | pF | 29 | |||
| Output capacitance | Coss | pF | 510 | |||
| Total gate charge | Qg | nC | 215 | VGS = 5 V/20 V, VDD = 470 V, ID = 40 A | ||
| Gate-source charge | Qgs | nC | 58 | |||
| Gate-drain charge | Qgd | nC | 35 | |||
| Turn-on delay time | td(on) | ns | 20 | VDD = 470 V, VGS = 5 V/20 V, ID = 40 A, Rg(ext) = 2.5 | ||
| Voltage fall time | tf | ns | 35 | |||
| Turn-off delay time | td(off) | ns | 35 | |||
| Voltage rise time | tr | ns | 20 | |||
| Turn-on switching energy | Eon | J | 420 | VDD = 470 V, VGS = 5 V/20 V, ID = 40 A, Rg(ext) = 2.5 , Body diode = 18 | ||
| Turn-off switching energy | Eoff | J | 90 | |||
| Diode forward voltage | VSD | V | 3.4 | ISD = 40 A, VGS = 0 V | ||
| Diode forward voltage | VSD | V | 3.8 | ISD = 40 A, VGS = 5 V | ||
| Reverse recovery time | trr | ns | 40 | ISD = 40 A, VGS = 5 V, VDD = 470 V, dl/dt = 1200 A/s | ||
| Reverse recovery charge | Qrr | nC | 495 | |||
| Reverse recovery current | IRRM | A | 19 | |||
| Equivalent series resistance | ESR | 0.69 | = 1 MHz, 25 mV, drain short | |||
| Short circuit withstand time | SCWT | s | 3 | VDS = 560 V, VGS = 20 V | ||
| Avalanche energy, single pulse | EAS | mJ | 4400 | VDS = 150 V, ID = 40 A |
Applications
- PV inverter, converter, and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- H/EV powertrain and EV charger
- Power supply and distribution
2210142000_MICROCHIP-MSC015SMA070B4_C3281099.pdf
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