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quality Power MOSFET MIRACLE POWER MJF08N70 with 700V Drain Source Voltage and Low On Resistance Performance factory
quality Power MOSFET MIRACLE POWER MJF08N70 with 700V Drain Source Voltage and Low On Resistance Performance factory

Power MOSFET MIRACLE POWER MJF08N70 with 700V Drain Source Voltage and Low On Resistance Performance

Key Attributes
Model Number: MJF08N70
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
8A
RDS(on):
600mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.55pF
Number:
1 N-channel
Output Capacitance(Coss):
76pF
Pd - Power Dissipation:
26W
Input Capacitance(Ciss):
599pF
Gate Charge(Qg):
8nC@13V
Mfr. Part #:
MJF08N70
Package:
TO-220F
Product Description

Product Overview

The MJF08N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It boasts a 700V breakdown voltage and an 8A continuous drain current with a low typ. RDS(ON) of 0.54 at VGS = 10V. This device is 100% avalanche tested and is suitable for applications such as PD adaptors, LED lighting, LCD & PDP TVs, and single-ended flyback or two-transistor forward topologies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Power MOSFET
  • Technology: Advanced Super Junction Technology
  • Model: MJF08N70

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 700 V
VGS Gate-Source Voltage 30 V
ID Drain Current-Continuous, TC =25C 8 A
IDM Drain Current-Pulsed 24 A
PD Maximum Power Dissipation @ TJ =25C 26 W
dv/dt Peak Diode Recovery dv/dt 15 V/ns
EAS Single Pulsed Avalanche Energy 180 mJ
TJ, TSTG Operating and Store Temperature Range -55 to 150 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 4.8 C/W
RJA Thermal Resistance, Junction to Ambient 80 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 700 - - V
IDSS Zero Gate Voltage Drain Current VDS = 700V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.8 - 4.2 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 3.0 A - 0.54 0.60
Dynamic Characteristics
RG Gate Resistance f = 1.0MHz - 24 -
Ciss Input Capacitance VDS = 50V, VGS = 0V, f = 10kHz - 599 - pF
Coss Output Capacitance - 76 - pF
Crss Reverse Transfer Capacitance - 3.55 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 400V, VGS = 13V, ID = 3A, RG= 6.8 - 26.8 - ns
tr Turn-On Rise Time - 24.8 - ns
td(off) Turn-Off Delay Time - 127.6 - ns
tf Turn-Off Fall Time - 21.2 - ns
Qgs Gate-Source Charge VDD = 400V, VGS = 0 to 10V, ID = 3A - 2.6 - nC
Qgd Gate-Drain Charge - 1.7 - nC
Qg Total Gate Charge - 8 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 8 A
ISM Maximum Pulsed Current VGS = 0V - - 24 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IF = 1A - 0.76 - V
Trr Body Diode Reverse Recovery Time VR = 400V, IF = 3A, dIF/dt = 100A/s - 174 - ns
Qrr Body Diode Reverse Recovery Charge VR = 400V, IF = 3A, dIF/dt = 100A/s - 1.2 - C

Notes:
a. TJ = +25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. Pulse width 300s; duty cycle 2%
d. L = 10mH, VDD = 50V, IAS = 9A, RG = 25 Starting TJ = 25 .


2408011701_MIRACLE-POWER-MJF08N70_C34373735.pdf

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