N Channel Power MOSFET MIRACLE POWER MPC13N65 with 13A Continuous Current and 650V Breakdown Voltage
Key Attributes
Model Number:
MPC13N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
800mΩ@10V,6.5A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
9.6pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.78nF
Pd - Power Dissipation:
150W
Output Capacitance(Coss):
162pF
Gate Charge(Qg):
40.2nC@10V
Mfr. Part #:
MPC13N65
Package:
TO-220
Product Description
Product Overview
The MPC13N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. This component offers robust performance with a 650V breakdown voltage, a continuous drain current of 13A, and a low on-resistance of 0.65 (Typ.) at VGS = 10V. It features low Crss and fast switching characteristics, making it suitable for applications such as adapters, LCD panel power supplies, e-bike chargers, and switching mode power supplies. The device is 100% avalanche tested, ensuring reliability in demanding conditions.Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Model: MPC13N65
- Technology: Miracle Technology
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 650 | V | |||
| Gate-Source Voltage (VGS) | 30 | V | |||
| Drain Current-Continuous (ID), TC =25C | 13 | A | |||
| Drain Current-Continuous (ID), TC =100C | 7.5 | A | |||
| Drain Current-Pulsed (IDM) | 48 | A | |||
| Maximum Power Dissipation (PD) @ TJ =25C | 150 | W | |||
| Single Pulsed Avalanche Energy (EAS) | d | 500 | mJ | ||
| Operating and Store Temperature Range (TJ, TSTG) | -55 | 150 | C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction-Case (RJC) | Max. | 0.83 | C/W | ||
| Thermal Resistance Junction-Ambient (RJA) | Max | 62.5 | C/W | ||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250A | 650 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 650V, VGS = 0V | - | - | 1 | A |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID =250A | 2 | - | 4 | V |
| Static Drain-Source On-Resistance (RDS(on)) | c VGS = 10V, ID =6.5A | - | 0.65 | 0.80 | |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 1780 | - | pF |
| Output Capacitance (Coss) | - | 162 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 9.6 | - | pF | |
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = 325V, ID =13A, RG = 10,VGS=10V | - | 28 | - | ns |
| Turn-On Rise Time (tr) | - | 26 | - | ns | |
| Turn-Off Delay Time (td(off)) | - | 64 | - | ns | |
| Turn-Off Fall Time (tf) | - | 44 | - | ns | |
| Total Gate Charge (Qg) | VDS = 520V, ID =13A, VGS = 10V | - | 40.2 | - | nC |
| Gate-Source Charge (Qgs) | - | 10.3 | - | nC | |
| Gate-Drain Charge (Qgd) | - | 14.4 | - | nC | |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | VGS = 0V | - | - | 12 | A |
| Maximum Pulsed Current (ISM) | VGS = 0V | - | - | 48 | A |
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IS = 13A | - | - | 1.5 | V |
| Reverse Recovery Time (trr) | IS=13A,Tj = 25 dIF/dt=100A/us, VGS=0V | - | 650 | - | ns |
| Reverse Recovery Charge (Qrr) | - | 4.29 | - | nC | |
2410122015_MIRACLE-POWER-MPC13N65_C17701991.pdf
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