MDD Microdiode Semiconductor BC847C NPN Transistor SOT23 Package Suitable for Switching Applications
Key Attributes
Model Number:
BC847C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC847C
Package:
SOT-23
Product Description
Product Overview
The BC846, BC847, and BC848 are NPN bipolar transistors in a SOT-23 package, ideally suited for automatic insertion. They are designed for switching and AF amplifier applications.
Product Attributes
- Brand: Microdiode
- Package: SOT-23
Technical Specifications
| Model | Parameter | Symbol | Test Conditions | Min | Unit | Max | Typ | ||
| BC846, BC847, BC848 | Collector-Base Voltage | VCBO | IE=0 | V | |||||
| BC846 | 80 | ||||||||
| BC847 | 50 | ||||||||
| BC848 | 30 | ||||||||
| BC846, BC847, BC848 | Collector-Emitter Voltage | VCEO | IB=0 | V | |||||
| BC846 | 65 | ||||||||
| BC847 | 45 | ||||||||
| BC848 | 30 | ||||||||
| Emitter-Base Voltage | VEBO | IE=0 | 6 | V | |||||
| Collector Current Continuous | IC | 0.1 | A | ||||||
| Collector Power Dissipation | PC* | Ta=25 | mW | 200 | |||||
| Junction Temperature | TJ | 150 | |||||||
| Storage Temperature | Tstg | -65 | 150 | ||||||
| BC846, BC847, BC848 | Collector-base breakdown voltage | VCBO | IC=10A, IE=0 | V | |||||
| BC846 | 80 | ||||||||
| BC847 | 50 | ||||||||
| BC848 | 30 | ||||||||
| BC846, BC847, BC848 | Collector-emitter breakdown voltage | VCEO | IC=10mA, IB=0 | V | |||||
| BC846 | 65 | ||||||||
| BC847 | 45 | ||||||||
| BC848 | 30 | ||||||||
| Emitter-base breakdown voltage | VEBO | IE=10A, IC=0 | V | 6 | |||||
| BC846, BC847, BC848 | Collector cut-off current | ICBO | VCB=70 V, IE=0 | A | 0.1 | ||||
| BC847 | VCB=50 V, IE=0 | A | 0.1 | ||||||
| BC848 | VCB=30 V, IE=0 | A | 0.1 | ||||||
| Emitter cut-off current | IEBO | VEB=5 V, IC=0 | A | 0.1 | |||||
| BC846A,847A,848A | DC current gain | hFE | VCE= 5V, IC= 2mA | ||||||
| BC846A,847A,848A | 110 | ||||||||
| BC846B,847B,848B | 200 | ||||||||
| BC846C,847C,848C | 420 | ||||||||
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA, IB= 5mA | V | 0.5 | |||||
| Base-emitter saturation voltage | VBE(sat) | IC=100mA, IB= 5mA | V | 1.1 | |||||
| Transition frequency | fT | VCE= 5 V, IC=10mA, f=100MHz | MHz | 100 | |||||
| Collector output capacitance | Cob | VCB=10V,f=1MHz | pF | 4.5 | |||||
2511061031_MDD-Microdiode-Semiconductor-BC847C_C840838.pdf
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