Voidless Glass Surface Mount Rectifier MICROCHIP 1N6620US with Peak Reverse Voltage Ratings up to 1000 Volts

Key Attributes
Model Number: 1N6620US
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
20A
Reverse Leakage Current (Ir):
500nA@220V
Reverse Recovery Time (trr):
30ns
Operating Junction Temperature Range:
-65℃~+150℃
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
1.4V@1.2A
Current - Rectified:
1.2A
Mfr. Part #:
1N6620US
Product Description

Product Overview

This series of voidless, hermetically sealed, surface-mount ultrafast recovery glass rectifiers is military-qualified to MIL-PRF-19500/585, making them ideal for high-reliability applications. These rectifiers are rated for 1.5 to 2.0 Amps with working peak reverse voltages from 200 to 1000 volts. They feature a voidless glass construction with an internal "Category I" metallurgical bond and are designed for applications requiring extremely fast switching and low forward loss, such as switching power supplies. Devices are also available in axial-leaded packages.

Product Attributes

  • Brand: Microsemi
  • Origin: Scottsdale Division
  • Construction: Voidless-glass, hermetically sealed
  • Certifications: MIL-PRF-19500/585 (JAN, JANTX, JANTXV available), further options for JANS with "SP" prefix
  • Package: Surface mount (equivalent to JEDEC 1N6620-1N6625 series), also available in axial-leaded
  • Appearance: Package "A" or D-5A
  • Marking: Cathode band only
  • Polarity: Cathode indicated by band
  • Terminations: End caps are Copper with Tin/Lead (Sn/Pb) finish

Technical Specifications

TypeWorking Peak Reverse Voltage (VRWM) (V)Average Rectified Forward Current (IO) @ TA=25C (A)Peak Forward Surge Current @ 25C (A)Max Forward Voltage (VF) @ IFMax Reverse Current (IR) @ VRWM (A) TA=25C / TA=150CMax Reverse Recovery Time (trr) Note 1 (ns)Max Reverse Recovery Time (trr) Note 2 (ns)Peak Recovery Current (IRM(rec)) Note 2 (A)Forward Recovery Voltage (VFRM) @ IF=0.5A (V)Thermal Resistance Junction to Endcap (RJEC) (C/W)Capacitance @ VR=10V (pF)
1N6620US2001.2201.40V @ 1.2A0.5 / 0.530453.5121310
1N6621US4001.2201.40V @ 1.2A0.5 / 0.530453.5121310
1N6622US6001.2201.40V @ 1.2A0.5 / 0.530453.5121310
1N6623US8001.0201.55V @ 1.0A0.5 / 0.550604.2181310
1N6624US9001.0201.55V @ 1.0A0.5 / 0.550604.2181310
1N6625US10001.0151.75V @ 1.0A1.0 / 1.060805.0301310

Notes:
Note 1: Low Current Reverse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750, Method 4031, Condition B.
Note 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, di/dt=100 A/s MIL-STD-750, Method 4031, Condition D.


2410301753_MICROCHIP-1N6620US_C17300878.pdf

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