Power MOSFET 650V 20A Low On Resistance and Fast Switching MIRACLE POWER MPF20N65A N Channel Device
Key Attributes
Model Number:
MPF20N65A
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
470mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
34pF
Number:
1 N-channel
Output Capacitance(Coss):
266pF
Pd - Power Dissipation:
32W
Input Capacitance(Ciss):
3.234nF
Gate Charge(Qg):
73nC@10V
Mfr. Part #:
MPF20N65A
Package:
TO-220F
Product Description
Product Overview
The MPF20N65A is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. This MOSFET offers a 650V breakdown voltage, a continuous drain current of 20A at 25C, and a low on-resistance of 0.40 (typ.) at VGS = 10V. It features low Crss and fast switching speeds, making it suitable for applications such as adapters, standby power supplies, and switching mode power supplies. The device is 100% avalanche tested.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Model: MPF20N65A
- Technology: Miracle Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | 650V, 20A | 0.40 @VGS = 10V | ||||
| Low Crss | ||||||
| Fast Switching | ||||||
| 100% Avalanche Tested | ||||||
| Application | ||||||
| Adapter | ||||||
| Standby Power | ||||||
| Switching Mode Power Supply | ||||||
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 650 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC =25C | 20 | A | |||
| ID | Drain Current-Continuous, TC =100C | 13 | A | |||
| IDM | Drain Current-Pulsed a | 80 | A | |||
| PD | Maximum Power Dissipation @ TJ =25C | 32 | W | |||
| EAS | Single Pulsed Avalanche Energy b | 980 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-Case | Max. 3.9 | C/W | |||
| RJA | Thermal Resistance Junction-Ambient | Max 55 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | 3 | 4 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID =10A | - | 0.4 | 0.47 | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 3234 | - | pF |
| Coss | Output Capacitance | - | 266 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 34 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 330V, ID =20A, RG = 24,VGS=10V | - | 45 | - | ns |
| tr | Turn-On Rise Time | - | 64 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 218 | - | ns | |
| tf | Turn-Off Fall Time | - | 84 | - | ns | |
| Qg | Total Gate Charge | VDS = 520V, ID =20A, VGS = 10V | - | 73 | - | nC |
| Qgs | Gate-Source Charge | - | 17 | - | nC | |
| Qgd | Gate-Drain Charge | - | 29 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 20 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 80 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 20A | - | - | 1.2 | V |
| trr | Body Diode Reverse Recovery Time | IF=20A,di/dt=100A/us | - | - | 494 | ns |
| Qrr | Body Diode Reverse Recovery Charge | - | - | 7.9 | C | |
2408011701_MIRACLE-POWER-MPF20N65A_C34373713.pdf
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