MDD Microdiode Semiconductor MDD3400 30V N channel MOSFET optimized for switching power applications
Key Attributes
Model Number:
MDD3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-50℃~+150℃
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
800mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 N-channel
Output Capacitance(Coss):
135pF
Input Capacitance(Ciss):
635pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
10.5nC@4.5V
Mfr. Part #:
MDD3400
Package:
SOT-23
Product Description
Product Overview
This 30V N-channel MOSFET, the MDD3400, is engineered with a unique device design for low RDS(ON), fast switching, and excellent avalanche characteristics. It features a high-density cell design for extremely low RDS(ON), making it suitable for load switching in portable devices, switching voltage regulators, and DC-DC converters.
Product Attributes
- Brand: Microdiode Electronics (Shenzhen)
- Model: MDD3400
- Package: SOT-23
- Marking: MDD3400
- Origin: Craftsman-Made Consciention Chip
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 30 | V | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 0.5 | 1.2 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=5A | 5 | 7 | m | |
| VGS=10V, ID=5.8A | 3 | m | ||||
| Gate-Source Leakage Current | IGSS | VGS=20V | 100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=24V, VGS=0V | 1 | A | ||
| VGS=-20V | -100 | nA | ||||
| Pulsed Drain Current | IDM | Note 1 | 23 | A | ||
| Continuous Drain Current | ID | Note 1 | 5.8 | A | ||
| Power Dissipation | PD | Note 2 | 1.5 | W | ||
| Thermal Resistance, Junction-Ambient | RJA | Note 2 | 100 | C/W | ||
| Junction Temperature | TJ | -50 | 150 | C | ||
| Storage Temperature | Tstg | -50 | 150 | C | ||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | 635 | pF | ||
| Output Capacitance | Coss | VDS=15V, VGS=0V, f=1MHz | 135 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V, f=1MHz | 40 | pF | ||
| Total Gate Charge | Qg | VGS=4.5V, VDS=15V, ID=5A | 10.5 | nC | ||
| Gate Source Charge | Qgs | VGS=4.5V, VDS=15V, ID=5A | 1.6 | nC | ||
| Gate Drain Charge | Qgd | VGS=4.5V, VDS=15V, ID=5A | 2.7 | nC | ||
| Turn on Delay Time | td(on) | VGS=4.5V, VDS=15V, ID=5A, RG=3.3 | 7.5 | ns | ||
| Turn on Rise Time | tr | VGS=4.5V, VDS=15V, ID=5A, RG=3.3 | 18 | ns | ||
| Turn Off Fall Time | tf | VGS=4.5V, VDS=15V, ID=5A, RG=3.3 | 36 | ns | ||
| Turn Off Delay Time | td(off) | VGS=4.5V, VDS=15V, ID=5A, RG=3.3 | 5 | ns | ||
| Source Drain Diode Forward Voltage | VSD | IS=3A, VGS=0V | 0.82 | 1.2 | V |
2509111014_MDD-Microdiode-Semiconductor-MDD3400_C427382.pdf
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