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quality N Channel Enhancement Mode MOSFET MIRACLE POWER MU3013D Designed for Load Switch and PWM Applications factory
quality N Channel Enhancement Mode MOSFET MIRACLE POWER MU3013D Designed for Load Switch and PWM Applications factory

N Channel Enhancement Mode MOSFET MIRACLE POWER MU3013D Designed for Load Switch and PWM Applications

Key Attributes
Model Number: MU3013D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.9mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Pd - Power Dissipation:
73.5W
Gate Charge(Qg):
67nC@10V
Mfr. Part #:
MU3013D
Package:
TO-252
Product Description

Product Overview

The MU3013D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology. It offers a 30V drain-source voltage and a continuous drain current of 150A at 25C, with a low on-resistance (RDS(ON)) of 2.6m at VGS = 10V. This MOSFET is designed for excellent RDS(ON) and low gate charge, making it suitable for applications such as load switches, PWM applications, and power management. It is 100% EAS guaranteed for reliability.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Technology: Advanced Trench Technology

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous (TC = 25C) 150 A
ID Drain Current-Continuous (TC = 100C) 95 A
IDM Drain Current-Pulsed 600 A
PD Maximum Power Dissipation (TC = 25C) 73.5 W
EAS Single Pulsed Avalanche Energy 225 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 1.7 C/W
RJA Thermal Resistance, Junction to Ambient 34 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 30 - - V
IDSS Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1.0 1.6 2.5 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 30A - 2.6 3.4 m
RDS(on) Static Drain-Source On-Resistance VGS = 4.5V, ID = 20A - 3.8 4.9 m
Dynamic Characteristics
Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz - 3650 - pF
Coss Output Capacitance - 494 - pF
Crss Reverse Transfer Capacitance - 366 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 15V, VGS = 10V, ID = 30A, RGEN = 3 - 10 - ns
tr Turn-On Rise Time - 19 - ns
td(off) Turn-Off Delay Time - 50 - ns
tf Turn-Off Fall Time - 20 - ns
Qg Total Gate Charge VDD = 30V, VGS = 0 to 10V, ID = 15A - 67 - nC
Qgs Gate-Source Charge - 11 - nC
Qgd Gate-Drain Charge - 19 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 150 A
ISM Maximum Pulsed Current - - 600 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, di/dt = 100A/s - 18 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, di/dt = 100A/s - 6 - nC

2504151445_MIRACLE-POWER-MU3013D_C47361165.pdf

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