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quality N Channel Enhancement Mode MOSFET MIRACLE POWER MSA003C with RoHS Compliance and Halogen Free Design factory
quality N Channel Enhancement Mode MOSFET MIRACLE POWER MSA003C with RoHS Compliance and Halogen Free Design factory

N Channel Enhancement Mode MOSFET MIRACLE POWER MSA003C with RoHS Compliance and Halogen Free Design

Key Attributes
Model Number: MSA003C
Product Custom Attributes
Drain To Source Voltage:
110V
Current - Continuous Drain(Id):
181A
RDS(on):
3.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Input Capacitance(Ciss):
6.72nF
Output Capacitance(Coss):
946pF
Pd - Power Dissipation:
284W
Gate Charge(Qg):
101nC@10V
Mfr. Part #:
MSA003C
Package:
TO-220
Product Description

Product Overview

The MSA003C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This MOSFET offers a 110V drain-source voltage and a continuous drain current of 181A at 25C. It features an excellent RDS(on) of 3.1m (Typ.) at VGS = 10V and low gate charge, making it suitable for load switching, PWM applications, and power management. The device is 100% EAS guaranteed and is Halogen-free and RoHS-compliant.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Model: MSA003C
  • Technology: N-Channel Enhancement Mode MOSFET
  • Certifications: Halogen-free; RoHS-compliant

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage, Current, RDS(on) 110V, 181A, 3.1m@VGS = 10V
Gate Charge Low
EAS Single Pulsed Avalanche Energy c 992 mJ
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C unless otherwise noted 110 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous TC = 25C 181 A
ID Drain Current-Continuous TC = 100C 128 A
IDM Drain Current-Pulsed b 724 A
PD Maximum Power Dissipation TC = 25C 284 W
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.44 C/W
RJA Thermal Resistance, Junction to Ambient 35 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 110 - - V
IDSS Zero Gate Voltage Drain Current VDS = 110V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.0 - 4.0 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 20A - 3.1 3.9 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - 2.1 -
Ciss Input Capacitance VDS = 55V, VGS = 0V, f = 1.0MHz - 6720 - pF
Coss Output Capacitance - 946 - pF
Crss Reverse Transfer Capacitance - 28 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 55V, VGS = 10V, ID = 20A RGEN = 6.2 - 32 - ns
tr Turn-On Rise Time - 45 - ns
td(off) Turn-Off Delay Time - 78 - ns
tf Turn-Off Fall Time - 48 - ns
Qg Total Gate Charge VDS = 55V, VGS = 0 to 10V, ID = 20A - 101 - nC
Qgs Gate-Source Charge - 34 - nC
Qgd Gate-Drain Charge - 24 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 181 A
ISM Maximum Pulsed Current - - 724 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 85 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 240 - nC

2504151445_MIRACLE-POWER-MSA003C_C47361110.pdf

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