1200 Volt 30 Amp Silicon Carbide Diode MICROCHIP MSC030SDA120BCT Ideal for Power Supplies and EV Chargers

Key Attributes
Model Number: MSC030SDA120BCT
Product Custom Attributes
Reverse Leakage Current (Ir):
200uA@1200V
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
1.8V@30A
Current - Rectified:
65A
Mfr. Part #:
MSC030SDA120BCT
Package:
TO-247-3
Product Description

Product Overview

The Microsemi MSC030SDA120B is a 1200 V, 30 A Silicon Carbide (SiC) Schottky Barrier Diode (SBD) designed to enhance performance and reduce the total cost of ownership for high-voltage applications. It offers lower forward voltage, minimal leakage current, and no reverse or forward recovery current, making it ideal for higher-reliability systems, reduced heatsink requirements, and improved efficiency. Applications include H/EV powertrain, EV chargers, power supplies, PV inverters, industrial motor drives, smart grid transmission and distribution, and aviation.

Product Attributes

  • Brand: Microsemi
  • Material: Silicon Carbide (SiC)
  • Certifications: RoHS compliant

Technical Specifications

ParameterSymbolRatingsUnitConditions
Maximum DC reverse voltageVR1200V
Maximum peak repetitive reverse voltageVRRMV
Maximum working peak reverse voltageVRWMV
Maximum DC forward currentIF65ATC = 25 C
Maximum DC forward currentIF29ATC = 135 C
Maximum DC forward currentIF24ATC = 145 C
Repetitive peak forward surge currentIFRM92ATC = 25 C, t = 8.3 ms, half sine wave
Non-repetitive forward surge currentIFSM165ATC = 25C, t = 8.3 ms, half sine wave
Power dissipationPTOT259WTC = 25 C
Power dissipationPTOT112WTC = 110 C
Operating junction and storage temperature rangeTJ, TSTG55 to 175C
Lead temperature for 10 secondsTL300C
Single pulse avalanche energyEAS100mJStarting TJ = 25 C, L = 0.22 mH, peak IL = 30 A
Junction-to-case thermal resistanceRJC0.4C/W
Package weightWT5.9g
Maximum mounting torqueTorque1.1N-m
Forward VoltageVF1.5VIF = 30 A, TJ = 25 C
Forward VoltageVF2.1VIF = 30 A, TJ = 175 C
Reverse leakage currentIRM9AVR = 1200 V, TJ = 25 C
Reverse leakage currentIRM200AVR = 1200 V, TJ = 175 C
Total capacitive chargeQC130nCVR = 600 V, TJ = 25 C
Junction capacitanceCJ141pFVR = 400 V, TJ = 25 C, = 1 MHz
Junction capacitanceCJ105pFVR = 800 V, TJ = 25 C, = 1 MHz

2410121848_MICROCHIP-MSC030SDA120BCT_C3759652.pdf

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