N Channel Power MOSFET MIRACLE POWER MPC04N65 Featuring Low Crss and High Pulsed Current for Power Conversion
Key Attributes
Model Number:
MPC04N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.7Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.5pF
Number:
1 N-channel
Input Capacitance(Ciss):
610pF
Output Capacitance(Coss):
53pF
Pd - Power Dissipation:
86W
Gate Charge(Qg):
14.2nC@10V
Mfr. Part #:
MPC04N65
Package:
TO-220
Product Description
Product Overview
The MPC04N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. Designed for high-efficiency applications, it features a 650V breakdown voltage, a continuous drain current of 4A, and a low on-resistance of 2.3 (typ.) at VGS = 10V. This MOSFET offers fast switching characteristics, low Crss, and is 100% avalanche tested, making it suitable for chargers and standby power supplies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| General Features | |||||
| Drain-Source Voltage | 650 | V | |||
| Gate-Source Voltage | ±30 | V | |||
| Drain Current-Continuous | TC = 25°C | 4 | A | ||
| Drain Current-Continuous | TC = 100°C | 2.5 | A | ||
| Drain Current-Pulsed | 16 | A | |||
| Maximum Power Dissipation | @ TJ = 25°C | 86 | W | ||
| Single Pulsed Avalanche Energy | 80 | mJ | |||
| Peak Diode Recovery dv/dt | 5.0 | V/ns | |||
| Operating and Store Temperature Range | -55 | 150 | °C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction-Case | Max. | 1.45 | °C/W | ||
| Thermal Resistance Junction-Ambient | Max. | 62.5 | °C/W | ||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage | VGS = 0V, ID = 250µA | 650 | - | - | V |
| Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1 | µA |
| Forward Gate Body Leakage Current | VDS = 0V, VGS = ±30V | - | - | ±100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage | VDS = VGS, ID = 250µA | 2 | - | 4 | V |
| Static Drain-Source On-Resistance | VGS = 10V, ID = 2A | - | 2.3 | 2.7 | Ω |
| Dynamic Characteristics | |||||
| Forward Transconductance | VDS=15V, ID =2A | - | 3.5 | - | S |
| Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 610 | - | pF |
| Output Capacitance | - | 53 | - | pF | |
| Reverse Transfer Capacitance | - | 3.5 | - | pF | |
| Switching Characteristics | |||||
| Turn-On Delay Time | VDD = 325V, ID =4A, RG = 25Ω,VGS=10V | - | 12.7 | - | ns |
| Turn-On Rise Time | - | 17.4 | - | ns | |
| Turn-Off Delay Time | - | 30.9 | - | ns | |
| Turn-Off Fall Time | - | 10.5 | - | ns | |
| Total Gate Charge | VDS = 520V, ID =4A, VGS = 10V | - | 14.2 | - | nC |
| Gate-Source Charge | - | 5.5 | - | nC | |
| Gate-Drain Charge | - | 3.8 | - | nC | |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 4 | A |
| Maximum Pulsed Current | VGS = 0V | - | - | 16 | A |
| Drain-Source Diode Forward Voltage | VGS = 0V, IS = 4A | - | - | 1.4 | V |
| Body Diode Reverse Recovery Time | di/dt=100A/us, IF=4A,VGS=0V | - | 264 | - | ns |
| Reverse Recovery Charge | - | 1.2 | - | µC | |
2410122015_MIRACLE-POWER-MPC04N65_C17701975.pdf
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