Low on resistance MEM2302XG transistor designed for battery management and power conversion systems
Key Attributes
Model Number:
MEM2302XG
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
RDS(on):
50mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
850mV
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
300pF
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
MEM2302XG
Package:
SOT-23
Product Description
The MEM2302X is an N-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology to minimize on-state resistance. It is particularly suited for low voltage applications and low power dissipation in a very small outline surface mount package (SOT23). Key features include a 20V/3A rating, low RDS(ON) values, and a high-density cell design for ultra-low on-resistance. This device is ideal for battery management, high-speed switching, and low-power DC to DC converters.
Product Attributes
- Brand: Microne
- Origin: China (www.microne.com.cn)
- Material: High cell density DMOS trench technology
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Drain-Source Voltage | VDSS | VGS=0V, ID=250uA | 20 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250uA | 0.51 | 0.53 | 0.85 | V |
| Gate-Body Leakage | IGSS | VDS=0VVGS=8V | 1.6 | 100 | nA | |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V VGS=0V | 6.3 | 1000 | nA | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=3A | 29 | m | ||
| VGS=2.5V, ID=2A | 36 | m | ||||
| Forward Transconductance | gFS | VDS = 5 V, ID = 3.6A | 8 | S | ||
| Source-drain (diode forward) voltage | VSD | VGS=0V,IS=1.25A | 0.4 | 0.7 | 1 | V |
| Input Capacitance | Ciss | VDS = 10 V, VGS = 0 V, f = 1 MHz | 300 | pF | ||
| Output Capacitance | Coss | VDS = 10 V, VGS = 0 V, f = 1 MHz | 120 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 10 V, VGS = 0 V, f = 1 MHz | 80 | pF | ||
| Turn-On Delay Time | td(on) | VDD = 15 V, RL = 2.8 ID3.6A VGEN = 4.5V, Rg = 36 | 8 | 15 | ns | |
| Rise Time | tr | VDD = 15 V, RL = 2.8 ID3.6A VGEN = 4.5V, Rg = 36 | 50 | 80 | ns | |
| Turn-Off Delay Time | td(off) | VDD = 15 V, RL = 2.8 ID3.6A VGEN = 4.5V, Rg = 36 | 15 | 60 | ns | |
| Fall-Time | tf | VDD = 15 V, RL = 2.8 ID3.6A VGEN = 4.5V, Rg = 36 | 10 | 25 | ns | |
| Total Gate Charge | Qg | VDS = 10V, VGS = 4.5 V, ID = 3.6A | 4 | 10 | nc | |
| Gate-Source Charge | Qgs | VDS = 10V, VGS = 4.5 V, ID = 3.6A | 0.65 | nc | ||
| Gate-Drain Charge | Qg | VDS = 10V, VGS = 4.5 V, ID = 3.6A | 1.5 | nc | ||
| Drain Current (TA=25) | ID | 3 | A | |||
| Drain Current (TA=70) | ID | 2 | A | |||
| Pulsed Drain Current | IDM | 1,2 | 15 | A | ||
| Total Power Dissipation | Pd | TA=25 | 0.7 | W | ||
| TA=70 | 0.46 | W | ||||
| operating junction temperature | Tj | 150 | ||||
| Storage Temperature Range | Tstg | -65 | 150 | |||
| Thermal Resistance,Junction-to-Ambient | RJA | 140 | /W |
2410121257_MICRONE-MEM2302XG_C94051.pdf
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