High cell density DMOS trench P channel transistor MEM2307M3G designed for power management solutions
Key Attributes
Model Number:
MEM2307M3G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
108mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
1.3V
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 P-Channel
Input Capacitance(Ciss):
840pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
14.3nC@4.5V
Mfr. Part #:
MEM2307M3G
Package:
SOT-23
Product Description
Product Overview
The MEM2307M3G is a P-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology. It is designed to minimize on-state resistance and is particularly suited for low voltage applications, offering low power dissipation in a very small outline surface mount package (SOT23-3). Key applications include power management, load switching, and battery protection.
Product Attributes
- Brand: Microne
- Origin: www.microne.com.cn
- Package Type: SOT23-3
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Test Condition | Min | Type | Max |
| Absolute Maximum Ratings | |||||||
| Drain-Source Voltage | VDSS | -30 | V | ||||
| Gate-Source Voltage | VGSS | ±20 | V | ||||
| Drain Current | ID | -4.1 (TA=25) / -3.5 (TA=70) | A | ||||
| Pulsed Drain Current | IDM | -20 | A | 1,2 | |||
| Total Power Dissipation | Pd | 1.4 (TA=25) / 1 (TA=70) | W | ||||
| Operating Temperature Range | TOpr | 150 | |||||
| Storage Temperature Range | Tstg | -55/150 | |||||
| Thermal Characteristics | |||||||
| Thermal Resistance, Junction-to-Ambient | RJA | 65 (t≤10s) / 85 (Steady-State) | /W | 90 (t≤10s) / 125 (Steady-State) | |||
| Thermal Resistance, Junction-to-Lead | RJL | 43 (Steady-State) | /W | 60 (Steady-State) | |||
| Electrical Characteristics | |||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-250uA | -30 | ||
| Gate Threshold Voltage | VGS(th) | -1 (VDS=VGS, ID=-250uA) / -1.3 (VDS=VGS, ID=-250uA) | V | -1 | -1.3 | -2 | |
| Gate-Body Leakage | IGSS | ±100 | nA | VDS=0V, VGS=±20V | ±100 | ||
| Zero Gate Voltage Drain Current | IDSS | -1000 | nA | VDS=-24V, VGS=0V | -1000 | ||
| Static Drain-Source On-Resistance | RDS(ON)1 | 88 | m | VGS=-10V,ID=-4.1A | 88 | ||
| Static Drain-Source On-Resistance | RDS(ON)2 | 108 | m | VGS=-4.5V,ID=-3A | 108 | ||
| Forward Transconductance | gFS | 5.5 | S | VDS = –5 V, ID = –4A | 5.5 | 8.2 | |
| Maximum Body-Diode Continuous Current | Is | -2.2 | A | -2.2 | |||
| Source-drain (diode forward) voltage | VSD | 0.77 | V | VGS=0V,ID=-1A | 0.77 | -1.0 | |
| Dynamic Characteristics | |||||||
| Input Capacitance | Ciss | 700 | pF | VGS=0V, VDS=-15V, f=1MHz | 700 | 840 | |
| Output Capacitance | Coss | 120 | pF | VGS=0V, VDS=-15V, f=1MHz | 120 | ||
| Reverse Transfer Capacitance | Crss | 75 | pF | VGS=0V, VDS=-15V, f=1MHz | 75 | ||
| Gate resistance | Rg | 10 | VGS=0V, VDS=0V, f=1MHz | 10 | 15 | ||
| Switching Characteristics | |||||||
| Turn-On Delay Time | td(on) | 8.6 | ns | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 8.6 | ||
| Rise Time | tr | 5 | ns | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 5 | ||
| Turn-Off Delay Time | td(off) | 28.2 | ns | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 28.2 | ||
| Fall-Time | tf | 13.5 | ns | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 13.5 | ||
| Total Gate Charge | Qg | 14.3 | nc | VDS = -15 V, VGS = -4.5 V, ID = -4A | 14.3 | ||
| Gate-Source Charge | Qgs | 3.1 | nc | VDS = -15 V, VGS = -4.5 V, ID = -4A | 3.1 | ||
| Gate-Drain Charge | Qg d | 3 | nc | VDS = -15 V, VGS = -4.5 V, ID = -4A | 3 | ||
2410121257_MICRONE-MEM2307M3G_C489594.pdf
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