N Channel Power MOSFET Device MDD Microdiode Semiconductor MDD3080 for Power Management Applications
Key Attributes
Model Number:
MDD3080
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5mΩ@10V;4.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.55V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
245pF
Output Capacitance(Coss):
280pF
Input Capacitance(Ciss):
2.33nF
Pd - Power Dissipation:
83W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
MDD3080
Package:
TO-252
Product Description
Product Overview
This N-Channel MOSFET, produced using MDD's advanced Power Trench technology, is optimized for minimal on-state resistance and superior switching performance with a best-in-class soft body diode. It is suitable for power management in telecom and industrial automation, motor drives, uninterruptible power supplies, and current switching in DC/DC & AC/DC sub-systems.
Product Attributes
- Brand: MDD
- Origin: Shenzhen
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| N-Channel Enhancement Mode POWER MOSFET | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 30 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Note 1) | ID | TA=25C unless otherwise noted | 80 | A | ||
| Single Pulsed Avalanche Energy (Note 3) | EAS | 247 | mJ | |||
| Thermal Resistance, steady-state | RJA | 65 | C/W | |||
| Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature | Tstg | -55 | 150 | C | ||
| Gate-Source Leakage Current | IGSS | VDS= -20V, VGS=20V | -100 | 100 | nA | |
| Drain-Source Leakage Current | IDSS | VDS=30V, VGS=0V | 1 | A | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 1.55 | 3.5 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=30A | 2.2 | 4.4 | m | |
| On-Resistance vs. Drain Current | RDS(ON) | VGS=4.5V, ID=20A | 7.4 | m | ||
| Turn on Delay Time | td(on) | VGS =10V VDD=20V ID=20A RG=3 | 10 | ns | ||
| Turn on Rise Time | tr | VGS =10V VDD=20V ID=20A RG=3 | 28 | ns | ||
| Turn Off Fall Time | tf | VGS =10V VDD=20V ID=20A RG=3 | 40 | ns | ||
| Turn Off Delay Time | td(off) | VGS =10V VDD=20V ID=20A RG=3 | 5 | ns | ||
| Drain-Source Diode Forward Voltage | VSD | IS=30A, VGS =0V | 0.8 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF=20A di/dt=100A/ s | 5 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=20A di/dt=100A/ s | 11 | nC | ||
| Input Capacitance | Ciss | VGS=0V VDS=20V f=1MHz | 280 | pF | ||
| Output Capacitance | Coss | VGS=0V VDS=20V f=1MHz | 245 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V VDS=20V f=1MHz | 10 | pF | ||
| Total Gate Charge | Qg | VGS=0 to 10V VDS=20V ID=20A | 10 | nC | ||
| Gate Source Charge | Qgs | VGS=0 to 10V VDS=20V ID=20A | 3.5 | nC | ||
| Gate Drain Charge | Qgd | VGS=0 to 10V VDS=20V ID=20A | 2.2 | nC |
2507221720_MDD-Microdiode-Semiconductor-MDD3080_C49383120.pdf
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