MEM2303M3G P channel transistor optimized for load switching and battery protection in compact form
Key Attributes
Model Number:
MEM2303M3G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-
RDS(on):
55mΩ@10V,4.2A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
77pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
954pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
-
Mfr. Part #:
MEM2303M3G
Package:
SOT-23
Product Description
Product Overview
The MEM2303M3G is a P-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology to minimize on-state resistance. This device is particularly suited for low voltage applications, offering low power dissipation in a very small outline surface mount package. It is ideal for power management, load switching, and battery protection circuits.
Product Attributes
- Brand: Microne
- Origin: China
- Series: MEM2303M3G
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit | |
| Static Characteristics | Drain-Source Breakdown Voltage | VGS=0V, ID=-250uA | -30 | -35 | V | ||
| Gate Threshold Voltage | VDS= VGS, ID=-250uA | -0.7 | -1.0 | -1.3 | V | ||
| Gate-Body Leakage | VDS=0VVGS=12V | 3 | 100 | nA | |||
| VDS=0VVGS=-12V | -3 | -100 | nA | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V VGS=0V | -3.5 | -1000 | nA | ||
| Static Drain-Source On-Resistance | RDS(ON)1 | VGS=-10V,ID=-4.2A | 55 | 58 | m | ||
| RDS(ON)2 | VGS=-4.5V,ID=-4A | 62 | 65 | m | |||
| RDS(ON)3 | VGS=-2.5V,ID=-2.5A | 72 | 90 | m | |||
| Forward Transconductance | gFS | VDS = 5 V, ID = 2.8 A | 7 | 11 | S | ||
| Maximum Body-Diode Continuous Current | Is | -2.2 | A | ||||
| Source-drain(diode forward) voltage | VSD | VGS=0V,ID=-1A | -0.8 | -1.0 | V | ||
| Dynamic Characteristics | Input Capacitance | Ciss | VGS=0V, VDS=-15V, f=1MHz | 954 | pF | ||
| Output Capacitance | Coss | 115 | pF | ||||
| Reverse Transfer Capacitance | Crss | 77 | pF | ||||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 6 | ||||
| Switching Characteristics | Turn-On Delay Time | td(on) | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 6.5 | ns | ||
| Rise Time | tr | 3.5 | ns | ||||
| Turn-Off Delay Time | td(off) | 38 | ns | ||||
| Fall-Time | tf | 12 | ns | ||||
| Total Gate Charge | Qg | VDS = -15 V, VGS = -4.5 V, ID = -4A | 9.5 | nC | |||
| Qgs | 2 | nC | |||||
| Qgd | 3 | nC |
2410121314_MICRONE-MEM2303M3G_C489699.pdf
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