Subminiature SOT23 package MICRONE MEM2302M3G MOSFET with dissipation and 3 amp drain current rating
Key Attributes
Model Number:
MEM2302M3G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-65℃~+150℃
RDS(on):
50mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
510mV
Reverse Transfer Capacitance (Crss@Vds):
80pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
300pF@10V
Pd - Power Dissipation:
460mW
Gate Charge(Qg):
4nC@10V
Mfr. Part #:
MEM2302M3G
Package:
SOT-23
Product Description
Product Overview
The MEM2302XG Series is an N-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology to minimize on-state resistance. This device is particularly suited for low voltage applications and offers low power dissipation in a very small outline surface mount package. Key features include a 20V/3A rating, low RDS(ON) values at various gate-source voltages, a high-density cell design for ultra-low on-resistance, and a subminiature SOT23 surface mount package. It is ideal for battery management, high-speed switching, and low-power DC to DC converters.
Product Attributes
- Brand: Microne
- Origin: China (www.microne.com.cn)
- Material: DMOS trench technology
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Unit | MEM2302X |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | V | 20 | |
| Gate-Source Voltage | VGSS | ±V | 8 | |
| Drain Current (TA=25) | ID | A | 3 | |
| Drain Current (TA=70) | ID | A | 2 | |
| Pulsed Drain Current | IDM | 1,2 | A | 15 |
| Total Power Dissipation (TA=25) | Pd | W | 0.7 | |
| Total Power Dissipation (TA=70) | Pd | W | 0.46 | |
| Operating Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | -65/150 | ||
| Thermal Characteristics | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | /W | 140 | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250uA | V | 20 (Typ: 23) |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250uA | V | 0.51 (Typ: 0.53, Max: 0.85) |
| Gate-Body Leakage | IGSS | VDS=0VVGS=8V | nA | 1.6 (Max: 100) |
| Gate-Body Leakage | IGSS | VDS=0VVGS=-8V | nA | -0.2 (Max: -100) |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V VGS=0V | nA | 6.3 (Max: 1000) |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=3A | m | 29 (Max: 50) |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V, ID=2A | m | 36 (Max: 65) |
| Forward Transconductance | gFS | VDS = 5 V, ID = 3.6A | S | 8 |
| Source-drain (diode forward) voltage | VSD | VGS=0V,IS=1.25A | V | 0.4 (Typ: 0.7, Max: 1) |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | VDS = 10 V, VGS = 0 V, f = 1 MHz | pF | 300 |
| Output Capacitance | Coss | VDS = 10 V, VGS = 0 V, f = 1 MHz | pF | 120 |
| Reverse Transfer Capacitance | Crss | VDS = 10 V, VGS = 0 V, f = 1 MHz | pF | 80 |
| Switching Characteristics | ||||
| Turn-On Delay Time | td(on) | VDD = 15 V, RL = 2.8 ID3.6A VGEN = 4.5V, Rg = 36 | ns | 8 (Max: 15) |
| Rise Time | tr | VDD = 15 V, RL = 2.8 ID3.6A VGEN = 4.5V, Rg = 36 | ns | 50 (Max: 80) |
| Turn-Off Delay Time | td(off) | VDD = 15 V, RL = 2.8 ID3.6A VGEN = 4.5V, Rg = 36 | ns | 15 (Max: 60) |
| Fall-Time | tf | VDD = 15 V, RL = 2.8 ID3.6A VGEN = 4.5V, Rg = 36 | ns | 10 (Max: 25) |
| Total Gate Charge | ||||
| Total Gate Charge | Qg | VDS = 10V, VGS = 4.5 V, ID = 3.6A | nC | 4 (Max: 10) |
| Gate-Source Charge | Qgs | VDS = 10V, VGS = 4.5 V, ID = 3.6A | nC | 0.65 |
| Gate-Drain Charge | Qg | VDS = 10V, VGS = 4.5 V, ID = 3.6A | nC | 1.5 |
2410121257_MICRONE-MEM2302M3G_C70367.pdf
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