Dual 20V N Channel MOSFET MDD Microdiode Semiconductor MDD8205 Suitable for LCD Display Inverters
Key Attributes
Model Number:
MDD8205
Product Custom Attributes
Configuration:
Common Drain
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
39mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
2 N-Channel
Output Capacitance(Coss):
70pF
Input Capacitance(Ciss):
500pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
5nC@4.5V
Mfr. Part #:
MDD8205
Package:
SOT-23-6L
Product Description
Product Overview
This 20V N-channel MOSFET is a dual die type designed for low RDS(on) and fast switching characteristics. It features a high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. Ideal for load switching in portable devices, battery-powered systems, DC-DC converters, LCD display inverters, and other portable equipment.
Product Attributes
- Brand: MDD
- Origin: Shenzhen
- Product Line: Dual 20V N-Channel Enhancement Mode MOSFET
- Model Number: MDD8205
- Package: SOT-23-6L
- Certifications: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID =250 A | 20 | V | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID =250 A | 0.4 | 0.65 | 1 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID =3A | 0.4 | 0.5 | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS =2.5V, ID=2.5A | 1 | 1.2 | ||
| Gate-Source Leakage Current | IGSS | VGS= 12V | 100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=20V, VGS =0V | 1 | A | ||
| Continuous Drain Current | ID | TA=25C | 5.0 | A | ||
| Pulsed Drain Current | IDM | TA=25C | 25 | A | ||
| Power Dissipation | PD | TA=25C | 1.5 | W | ||
| Thermal Resistance, Junction-Ambient | RJA | Surface Mounted on FR4 Board, t 10 sec. | 80 | C/W | ||
| Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature | Tstg | -55 | 150 | C | ||
| Input Capacitance | Ciss | VDS=10V, VGS=0V, f=1.0MHz | 70 | pF | ||
| Output Capacitance | Coss | VDS=10V, VGS=0V, f=1.0MHz | 65 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=10V, VGS=0V, f=1.0MHz | 5 | pF | ||
| Total Gate Charge | Qg | VDS=10V, ID=5A, VGS=4.5V | 1.4 | nC | ||
| Gate Source Charge | Qgs | VDS=10V, ID=5A, VGS=4.5V | 0.9 | nC | ||
| Gate Drain Charge | Qgd | VDS=10V, ID=5A, VGS=4.5V | nC | |||
| Turn on Delay Time | td(on) | VGS=4.5V, ID=1A, RG=6 | 9 | ns | ||
| Turn on Rise Time | tr | VGS=4.5V, ID=1A, RG=6 | 17 | ns | ||
| Turn Off Fall Time | tf | VGS=4.5V, ID=1A, RG=6 | 10 | ns | ||
| Turn Off Delay Time | td(off) | VGS=4.5V, ID=1A, RG=6 | 30 | ns | ||
| Drain-Source Diode Forward Voltage | VSD | IS=5A, V GS=0V | 0.8 | 1.2 | V |
2501031033_MDD-Microdiode-Semiconductor-MDD8205_C42432189.pdf
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