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quality Mini Circuits SAV 541 E PHEMT transistor optimized for GSM WCDMA WiMax WLAN and ISM wireless systems factory
quality Mini Circuits SAV 541 E PHEMT transistor optimized for GSM WCDMA WiMax WLAN and ISM wireless systems factory

Mini Circuits SAV 541 E PHEMT transistor optimized for GSM WCDMA WiMax WLAN and ISM wireless systems

Key Attributes
Model Number: SAV-541+
Product Custom Attributes
Mfr. Part #:
SAV-541+
Package:
SC-70-4
Product Description

Product Overview

The SAV-541+ is an ultra-low noise, medium current E-PHEMT transistor designed for high IP3 performance and single positive supply voltage operation. It excels in demanding base station applications, offering outstanding noise figures, particularly below 2.5 GHz. This device can be used as a replacement for Avago ATF-54143 and is suitable for applications in Cellular, ISM, GSM, WCDMA, WiMax, WLAN, UNII, and HIPERLAN. Mini-Circuits also offers these units assembled into complete 50 in/out modules.

Product Attributes

  • Brand: Mini-Circuits
  • Technology: E-PHEMT*
  • RoHS Compliance: +Suffix indicates RoHS Compliance
  • Package Style: MMM1362 (SOT-343 / SC-70)
  • Lead Finish: Matte Tin
  • ESD Rating: Human Body Model (HBM): Class 1A (250 V to < 500 V); Machine Model (MM): Class M1 (40 V)
  • MSL Rating: MSL1

Technical Specifications

Parameter Condition Min. Typ. Max. Units
DC Specifications
VGS Operational Gate Voltage VDS=3V, IDS=60 mA 0.37 0.48 0.69 V
VTH Threshold Voltage VDS=3V, IDS=4 mA 0.18 0.26 0.38 V
IDSS Saturated Drain Current VDS=3V, VGS=0 V 1.0 5.0 µA
GM Transconductance VDS=3V, Gm=Δ IDS/ΔVGS ΔVGS=VGS1-VGS2 VGS1=VGS at IDS=60 mA VGS2=VGS1+0.05V 392 mS
IGSS Gate leakage Current VGD=VGS=-3V 200 µA
RF Specifications, Z0=50 Ohms
NF Noise Figure VDS=3V, IDS=60 mA, f=0.9 GHz 0.4 dB
VDS=3V, IDS=60 mA, f=2.0 GHz 0.5 0.9 dB
VDS=3V, IDS=60 mA, f=3.9 GHz 1.0 dB
VDS=3V, IDS=60 mA, f=5.8 GHz 1.9 dB
Gain VDS=3V, IDS=60 mA, f=0.9 GHz 23.2 dB
VDS=3V, IDS=60 mA, f=2.0 GHz 15.0 17.6 18.5 dB
VDS=3V, IDS=60 mA, f=3.9 GHz 12.5 dB
VDS=3V, IDS=60 mA, f=5.8 GHz 8.7 dB
OIP3 Output IP3 VDS=3V, IDS=60 mA, f=0.9 GHz 32.6 dBm
VDS=3V, IDS=60 mA, f=2.0 GHz 30.0 33.1 dBm
VDS=3V, IDS=60 mA, f=3.9 GHz 33.0 dBm
VDS=3V, IDS=60 mA, f=5.8 GHz 31.0 dBm
P1dB Power output at 1 dB Compression VDS=3V, IDS=60 mA, f=0.9 GHz 19.1 dBm
VDS=3V, IDS=60 mA, f=2.0 GHz 19.2 dBm
VDS=3V, IDS=60 mA, f=3.9 GHz 19.0 dBm
VDS=3V, IDS=60 mA, f=5.8 GHz 18.2 dBm
Maximum Ratings
VDS Drain-Source Voltage 5 V
VGS Gate-Source Voltage -5 0.7 V
VGD Gate-Drain Voltage -5 0.7 V
IDS Drain Current 120 mA
IGS Gate Current 2 mA
PDISS Total Dissipated Power 360 mW
PIN RF Input Power 17 dBm
TCH Channel Temperature 150 °C
TOP Operating Temperature -40 85 °C
TSTD Storage Temperature -65 150 °C
ΘJC Thermal Resistance 160 °C/W

2410121739_Mini-Circuits-SAV-541-_C3279678.pdf

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