Silicon Bipolar Epitaxial Planar Power Amplifier Transistor Minos MJE15032G with 8A Collector Current and 250V Voltage
Product Overview
This is a Silicon Bipolar Epitaxial Planar NPN-PNP Matched Power Amplifier Transistor designed for high-fidelity audio power amplifier pre-stage driving. It offers a large output current of 8A, a high breakdown voltage of VCEO 250V, and a wide operating area. The transistor also boasts superior frequency characteristics with fT > 30MHz. It is suitable for continuous load operation under demanding conditions such as high temperature, high voltage, and large current, as well as significant temperature variations. However, reliability may be reduced when operating at maximum current, temperature, and voltage.
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen, China ()
- Package Type: TO-220
- Package Type: TO-220EW
Technical Specifications
| Parameter Name | Symbol | Rating (Tc=25) | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCBO | 250 | V |
| Collector-Emitter Voltage | VCEO | 250 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 8 | A |
| Base Current | IB | 2 | A |
| Collector Power Dissipation | PC | 50 | W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | TSTG | -55~150 |
| Parameter Name | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Breakdown Leakage Current | VCB=250V; IE=0 | 1 | mA | ||
| Emitter-Base Breakdown Leakage Current | VEB=5V; Ic=0 | 1 | mA | ||
| Collector-Emitter Breakdown Voltage | IC=5mA,IB=0 | 250 | V | ||
| DC Current Gain | VCE=5V; IC=0.5A | 70 | |||
| Collector-Emitter Saturation Voltage | IC=1A; IB=-100mA | 0.5 | V | ||
| Base-Emitter Voltage | VCE=5V;IC=1A | 1.0 | V | ||
| Characteristic Frequency | VCE=5V; IC=1A | 30 | MHz |
| Parameter | Parameter Description | Typical Value | Condition | Unit |
|---|---|---|---|---|
| Thermal Resistance (Junction to Case) | Junction to Case Temperature | 0.30 | /W |
Notes:
- Exceeding the maximum ratings of the device may cause damage or permanent failure, affecting machine dependability. Please adhere to absolute maximum ratings during circuit design.
- When installing a heat sink, pay attention to torsional moment and the smoothness of the heat sink.
- MOSFETs are sensitive to static electricity; protect them from damage during use.
- Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
Contact Information:
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026, Shennan Middle Road, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Tel: 0755-83273777
2410121331_Minos-MJE15032G_C7587863.pdf
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