MDD Microdiode Semiconductor MDD210N40P N Channel MOSFET Featuring Low RDS ON and High Drain Current
Key Attributes
Model Number:
MDD210N40P
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
210A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Pd - Power Dissipation:
310W
Gate Charge(Qg):
190nC@10V
Mfr. Part #:
MDD210N40P
Package:
TO-220C-3L
Product Description
Product Overview
The MDD210N40P is an N-Channel MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications including battery protection, power management, and switched-mode power supplies. Key features include low RDS(ON), extremely low switching loss, and excellent reliability and uniformity.
Product Attributes
- Brand: Microdiode Electronics (Shenzhen)
- Origin: Shenzhen
- Package: TO-220C-3L
- Marking: MDD210N40P
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | -20 | +20 | V | ||
| Continuous Drain Current | ID | Note 1 | 210 | A | ||
| Pulsed Drain Current | IDM | Note 2 | 840 | A | ||
| Power Dissipation | PD | TA=25C | 310 | W | ||
| Storage Temperature | Tstg | -55 | +150 | C | ||
| Junction Temperature | TJ | -55 | +150 | C | ||
| Thermal Resistance, Junction to Case | RJC | 0.8 | C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | (BR)DSS | VGS=0V, ID=250A | 40 | V | ||
| Gate-Source Leakage Current | IGSS | VGS=20V | 100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=40V, VGS=0V | 1 | A | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 2.5 | 4.5 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=210A | 1.5 | 1.65 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=20A | 8 | m | ||
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VGS=10V, VDD=30V, RL=15, RG=2.5 | 15 | ns | ||
| Turn on Rise Time | tr | VGS=10V, VDD=30V, RL=15, RG=2.5 | 38 | ns | ||
| Turn Off Delay Time | td(off) | VGS=10V, VDD=30V, RL=15, RG=2.5 | 100 | ns | ||
| Turn Off Fall Time | tf | VGS=10V, VDD=30V, RL=15, RG=2.5 | 30 | ns | ||
| Source Drain Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | IS=20A, VGS=0V | 0.8 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF=20A, di/dt=100A/s | 50 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=20A, di/dt=100A/s | 90 | nC | ||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V, VGS=0V, f=1MHz | 12300 | pF | ||
| Output Capacitance | Coss | VDS=20V, VGS=0V, f=1MHz | 770 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=20V, VGS=0V, f=1MHz | 580 | pF | ||
| Total Gate Charge | Qg | VDS=20V, ID=20A, VGS=10V | 35.5 | nC | ||
| Gate Source Charge | Qgs | VDS=20V, ID=20A, VGS=10V | 42 | nC | ||
| Gate Drain Charge | Qgd | VDS=20V, ID=20A, VGS=10V | 190 | nC | ||
2504101957_MDD-Microdiode-Semiconductor-MDD210N40P_C45350857.pdf
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