Silicon Bipolar Epitaxial Planar NPN PNP Paired Transistor Minos MJL21196 for Audio Power Amplifiers
Key Attributes
Model Number:
MJL21196
Product Custom Attributes
Current - Collector Cutoff:
5uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
250W
Transition Frequency(fT):
4MHz
Type:
NPN+PNP
Current - Collector(Ic):
16A
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-
Mfr. Part #:
MJL21196
Package:
TO-264
Product Description
Product Overview
This is a silicon bipolar epitaxial planar NPN-PNP paired power amplifier transistor designed for high-fidelity audio applications. It offers a large collector current of Ic=16A and a high collector-emitter voltage of VCEO250V. The transistor features a wide safe operating area (3.2A/80V @ 1 Second) and excellent frequency characteristics with fT > 20MHz. It is suitable for the output stage of high-fidelity audio amplifiers exceeding 100W. The device is designed for continuous load operation under high temperature, high voltage, and large current conditions, withstanding significant temperature variations. However, reliability may be reduced when operating at maximum current, temperature, and voltage.
Product Attributes
- Brand: MNS-KX
- Material: Silicon Bipolar Epitaxial Planar
- Type: NPN-PNP Paired Power Amplifier Transistor
- Packaging: TO-264
Technical Specifications
| Parameter Name | Symbol | Test Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25) | ||||||
| Collector-Emitter Voltage | VCBO | 330 | V | |||
| Collector-Emitter Voltage | VCEO | 250 | V | |||
| Emitter-Base Voltage | VEBO | 5.0 | V | |||
| Collector Current | IC | 16.0 | A | |||
| Base Current | IB | 5.0 | A | |||
| Collector Power Dissipation (Tc=25) | PC | 250 | W | |||
| Junction Temperature | Tj | 10 | ||||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Electrical Characteristics (Tc=25) | ||||||
| Collector-Base Breakdown Leakage | ICBO | VCB=250V; IE=0 | 5.0 | uA | ||
| Emitter-Base Breakdown Leakage | IEBO | VEB=5V; Ic=0 | 5.0 | uA | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=50mA,IB=0 | 250 | 300 | V | |
| Amplification Gain | hFE | VCE=5V; IC=1A | 75 | 150 | ||
| Amplification Gain | hFE(2) | VCE=5V; IC=8A | 25 | 100 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=8A; IB=0.8A | 1.4 | V | ||
| Base-Emitter Saturation Voltage | VBE | VCE=5V;IC=8A | 2.2 | V | ||
| Characteristic Frequency | fT | VCE=5V; IC=1A | 4 | MHz | ||
| Typical Characteristics | ||||||
| Thermal Resistance (Junction to Case) | RJC | 0.35 | /W | |||
Packaging Information
- Package Type: TO-264
Important Notes
- Exceeding the maximum ratings of the device may cause damage or permanent failure, affecting machine dependability. Always adhere to absolute maximum ratings during circuit design.
- When installing a heat sink, pay attention to torsional moment and the smoothness of the heat sink.
- MOSFETs are sensitive to static electricity; protect the device from static discharge during use.
- Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
Contact Information
- Company: Shenzhen Minos Technology Co., Ltd. (Headquarters)
- Address: 22B-22C, Tianmian City Building, 4026 Shennan Middle Road, Huafu Street, Futian District, Shenzhen
- Postal Code: 518025
- Phone: 0755-83273777
2410121321_Minos-MJL21196_C19189957.pdf
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