MDD Microdiode Semiconductor MDD2N65D 650V N Channel MOSFET Designed for Switch Mode Power Supplies
Key Attributes
Model Number:
MDD2N65D
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.2Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
3.4pF
Number:
1 N-channel
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
338pF@25V
Gate Charge(Qg):
10.2nC
Mfr. Part #:
MDD2N65D
Package:
TO-252
Product Description
Product Overview
The MDD2N65F/MDD2N65P/MDD2N65D is a 650V N-Channel Enhancement Mode MOSFET designed for high-efficiency applications. Key features include ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and improved dv/dt capability for high ruggedness. It is tested for avalanche energy and is suitable for high efficiency switch mode power supplies, electronic lamp ballasts based on half bridge, and LED power supplies.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Model | VDS (V) | ID (Tc=25) (A) | RDS(on),max (@VGS=10V) () | Qg,typ (nC) | Package |
| MDD2N65F/MDD2N65P/MDD2N65D | 650 | 2 | 5.2 | 10.2 | TO-220F-3L, TO-220-3L, TO-252 |
| Parameter | Symbol | TO-220F Value | TO-220/TO-252 Value | Unit |
| Power Dissipation | PD | 27 | 35 | W |
| Thermal resistance, Junction-to-case | RJC | 4.63 | 3.57 | C/W |
| Thermal resistance, Junction-to-ambient | RJA | 100 | 62 | C/W |
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 650 | -- | -- | V |
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | -- | -- | 100 | nA |
| Drain-Source Leakage Current | IDSS | VDS=650V, VGS=0V | -- | -- | 1 | uA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 2.0 | -- | 4.0 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=1A | -- | 5.2 | -- | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | -- | 338 | -- | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | -- | 36 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | -- | 3.4 | -- | pF |
| Total Gate Charge | Qg | VDS=520V, VGS=10V, ID=2A | -- | 10.2 | -- | nC |
| Gate Source Charge | Qgs | VDS=520V, VGS=10V, ID=2A | -- | 2.6 | -- | nC |
| Gate Drain Charge | Qgd | VDS=520V, VGS=10V, ID=2A | -- | 4.7 | -- | nC |
| Turn on Delay Time | td(on) | VDS=325V, ID=2A, RG=10 | -- | -- | 17.2 | ns |
| Turn on Rise Time | tr | VDS=325V, ID=2A, RG=10 | -- | -- | 35.6 | ns |
| Turn Off Delay Time | td(off) | VDS=325V, ID=2A, RG=10 | -- | -- | 33.9 | ns |
| Turn Off Fall Time | tf | VDS=325V, ID=2A, RG=10 | -- | -- | 29 | ns |
| Source drain current (Body Diode) | ISD | -- | -- | -- | 2 | A |
| Drain-Source Diode Forward Voltage | VSD | IS=2A, VGS=0V | -- | 1.5 | -- | V |
| Body Diode Reverse Recovery Time | trr | VR=400V, IF=2A, -diF/dt=100A/s | -- | -- | 221.8 | ns |
| Body Diode Reverse Recovery Charge | Qrr | VR=400V, IF=2A, -diF/dt=100A/s | -- | 0.75 | -- | uC |
2408090958_MDD-Microdiode-Semiconductor-MDD2N65D_C5299401.pdf
Related Products
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
