MDD Microdiode Semiconductor MDD12N60F 600V N Channel MOSFET RoHS compliant for environmental safety
Key Attributes
Model Number:
MDD12N60F
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
12A
RDS(on):
530mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7.2pF
Output Capacitance(Coss):
163pF
Input Capacitance(Ciss):
1.96nF
Pd - Power Dissipation:
42W
Gate Charge(Qg):
40.8nC
Mfr. Part #:
MDD12N60F
Package:
TO-220F
Product Description
Product Overview
The MDD12N60F is a 600V N-Channel Enhancement Mode MOSFET designed for high-efficiency power applications. It features low RDS(on), low gate charge, and is 100% UIS tested. This MOSFET is RoHS compliant and suitable for power factor correction, switched-mode power supplies, and LED drivers.
Product Attributes
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Condition |
| Absolute Maximum Ratings | VDS | 600 | V | |
| VGS | ±30 | V | ||
| ID | 12 | A | Tc=25°C | |
| PD | 42 | W | TO-220F | |
| TJ | 150 | °C | ||
| Tstg | -55 ~150 | °C | ||
| IDM | 48 | A | Pulsed Drain Current(Note 1) | |
| Thermal Characteristics | RθJC | 2.98 | °C/W | TO-220F |
| RθJA | 110 | °C/W | TO-220F | |
| TJ | 150 | °C | Junction Temperature | |
| Dynamic Electrical Characteristics | Ciss | 1960 | pF | VDS=25V, VGS=0V, f=1MHz |
| Coss | 163 | pF | VDS=25V, VGS=0V, f=1MHz | |
| Crss | 7.2 | pF | VDS=25V, VGS=0V, f=1MHz | |
| Gate Charge | Qg | 40.8 | nC | VDS=480V, VGS=10V, ID=12A (Note1,2) |
| Qgs | 11.0 | nC | VDS=480V, VGS=10V, ID=12A (Note1,2) | |
| Qgd | 15.6 | nC | VDS=480V, VGS=10V, ID=12A (Note1,2) | |
| Switching Characteristics | td(on) | 14.3 | ns | VDS=300V, ID=12A, RG=10Ω (Note1,2) |
| tr | 37.6 | ns | VDS=300V, ID=12A, RG=10Ω (Note1,2) | |
| td(off) | 65.4 | ns | VDS=300V, ID=12A, RG=10Ω (Note1,2) | |
| tf | 14.2 | ns | VDS=300V, ID=12A, RG=10Ω (Note1,2) | |
| Source Drain Diode Characteristics | IS | 12 | A | Continuous diode forward current |
| VSD | 1.5 | V | IS=12A, VGS=0V | |
| IS,pulse | 48 | A | Continuous diode forward current | |
| Electrical Characteristics | V(BR)DSS | 600 | V | VGS=0V, ID=250µA |
| IGSS | 100 | nA | VGS=30V, VDS=0V | |
| IDSS | 1 | µA | VDS=600V, VGS=0V | |
| VGS(TH) | 2.0 - 4.0 | V | VDS=VGS, ID=250µA | |
| RDS(ON) | 0.75 | Ω | VGS=10V, ID=6A | |
| RDS(ON) | 0.53 | Ω | VGS=10V, ID=12A |
2506181720_MDD-Microdiode-Semiconductor-MDD12N60F_C49230728.pdf
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