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quality Power Amplifier Minos 2SC4793 NPN Triple Diffusion Type Suitable for High Voltage Electronic Circuits factory
quality Power Amplifier Minos 2SC4793 NPN Triple Diffusion Type Suitable for High Voltage Electronic Circuits factory

Power Amplifier Minos 2SC4793 NPN Triple Diffusion Type Suitable for High Voltage Electronic Circuits

Key Attributes
Model Number: 2SC4793
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
50W
Transition Frequency(fT):
40MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
230V
Operating Temperature:
-
Mfr. Part #:
2SC4793
Package:
TO-220F-3
Product Description

Product Overview

The Minos Silicon NPN Triple Diffusion Type Power Amplifier is designed for high-voltage applications. It is complementary to the 2SA1837 and features a high collector voltage of 230V (min). This power amplifier is suitable for various electronic circuits requiring robust performance and reliability.

Product Attributes

  • Brand: Minos Silicon
  • Type: NPN Triple Diffusion Type Power Amplifier
  • Package: TO-220F

Technical Specifications

Symbol Parameter Rating Unit Test Condition Min Typ Max
Absolute Maximum Ratings
VCBO Collector-base voltage 230 V
VCEO Collector-emitter voltage 230 V
VEBO Emitter-base voltage 5 V
IC Collector current 1 A
IB Base current 0.2 A
PC Collector power dissipation (Tc=25) 50 W
Tj Junction temperature 150
TSTG Storage temperature range -55 150
Thermal Characteristics
RJC Junction-to-Case /W 3.0
Electrical Characteristics
ICBO Collector-Base Cut-off Current uA VCB=230V, IE=0 1.0
IEBO Emitter-Base Cut-off Current uA VEB=5V, IC=0 1.0
VCEO Collector-Emitter Breakdown Voltage 230 V IC=1mA
hFE DC current gain IC=0.1A; VCE=5V 100 300
VCEsat Collector-emitter saturation voltage V IC=0.5A; IB=0.05A 0.5
VBEsat Base-Emitter Saturation Voltage V IC=0.5A,IB=0.05A 1.4
VBE Base-emitter voltage V VCE=5V;IC=0.5A 1.5
fT Transition frequency 40 MHz VCE=10V;IC=100mA

Package Information

TO-220F PACKAGE

Symbol Dimensions (millimeters) Min Max
A 4.35 4.75
A1 2.30 2.70
A2 0.40 0.80
A3 2.1 2.50
b 0.60 1.00
b1 1.00 1.40
c 0.30 0.70
e 2.30 2.70
E 9.80 10.2
E1 6.30 6.70
H 15.6 16.0
H1 8.80 9.20
H2 12.9 13.5
H3 3.10 3.50
G 3.10 3.50
P 3.10 3.50

Important Notes:

  • Exceeding the maximum ratings of the device may cause damage, including permanent failure, which can affect the dependability of the machine. Please adhere to the absolute maximum ratings during circuit design.
  • When installing a heat sink, pay attention to the torsional moment and the smoothness of the heat sink.
  • MOSFETs are sensitive to static electricity and require protection during use.
  • Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.

2410122013_Minos-2SC4793_C2920868.pdf

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