P Channel Vertical DMOS FET MICROCHIP TP2640N3 G with Low Threshold Voltage and High Input Impedance
Key Attributes
Model Number:
TP2640N3-G
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
180mA
RDS(on):
15Ω@4.5V,150mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF@25V
Number:
1 P-Channel
Output Capacitance(Coss):
50pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
300pF
Mfr. Part #:
TP2640N3-G
Package:
TO-92-3
Product Description
Product Overview
The TP2640 is a low-threshold, P-Channel, Enhancement-mode (normally-off) vertical DMOS FET. It utilizes an advanced vertical DMOS structure and a silicon gate manufacturing process, offering the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally induced secondary breakdown, making it ideal for a wide range of switching and amplifying applications requiring high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds. Its low threshold voltage makes it particularly suitable for logic-level interfaces.
Product Attributes
- Brand: Microchip Technology Inc.
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Pb-free (JEDEC designator for Matte Tin (Sn))
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-to-Source Voltage | BVDSS | -400 | V | |||
| Drain-to-Gate Voltage | BVDGS | -400 | V | |||
| Gate-to-Source Voltage | VGS | ±20 | V | |||
| Operating Ambient Temperature | TA | -55 | +150 | °C | ||
| Storage Temperature | TS | -55 | +150 | °C | ||
| DC ELECTRICAL CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | -400 | V | VGS = 0V, ID = -2 mA | ||
| Gate Threshold Voltage | VGS(th) | -0.8 | -2 | V | VGS = VDS, ID = -1 mA | |
| Change in VGS(th) with Temperature | ΔVGS(th) | 5 | mV/°C | VGS = VDS, ID = -1 mA (Note 1) | ||
| Gate Body Leakage Current | IGSS | -100 | nA | VGS = ±20V, VDS = 0V | ||
| Zero-Gate Voltage Drain Current | IDSS | -1 | µA | VGS = 0V, VDS = -100V | ||
| -10 | mA | VGS = 0V, VDS = Maximum rating | ||||
| -1 | mA | VDS = 0.8 Maximum rating, VGS = 0V, TA = 125°C (Note 1) | ||||
| On-State Drain Current | ID(ON) | -0.7 | A | VGS = -10V, VDS = -25V | ||
| Static Drain-to-Source On-State Resistance | RDS(ON) | 12 | 15 | Ω | VGS = -2.5V, ID = -20 mA | |
| 11 | 15 | Ω | VGS = -4.5V, ID = -150 mA | |||
| 11 | 15 | Ω | VGS = -10V, ID = -300 mA | |||
| Change in RDS(ON) with Temperature | ΔRDS(ON) | 0.75 | %/°C | VGS = -10V, ID = -300 mA (Note 1) | ||
| AC ELECTRICAL CHARACTERISTICS | ||||||
| Forward Transconductance | GFS | 200 | mmho | VDS = -25V, ID = -300 mA | ||
| Input Capacitance | CISS | 300 | pF | VGS = 0V, VDS = -25V, f = 1 MHz | ||
| Common-Source Output Capacitance | COSS | 50 | pF | |||
| Reverse Transfer Capacitance | CRSS | 12 | pF | |||
| Turn-On Delay Time | td(ON) | 10 | ns | VDD = -25V, ID = -300 mA, RGEN = 25Ω | ||
| Rise Time | tr | 15 | ns | |||
| Turn-Off Delay Time | td(OFF) | 60 | ns | |||
| Fall Time | tf | 40 | ns | |||
| DIODE PARAMETER | ||||||
| Diode Forward Voltage Drop | VSD | 1.8 | V | VGS = 0V, IDS = -200 mA (Note 1) | ||
| Reverse Recovery Time | trr | 300 | ns | VGS = 0V, IDS = -200 mA | ||
| TEMPERATURE SPECIFICATIONS | ||||||
| Operating Ambient Temperature | TA | -55 | +150 | °C | ||
| Storage Temperature | TS | -55 | +150 | °C | ||
| PACKAGE THERMAL RESISTANCE | ||||||
| 3-lead TO-92 | θJA | 132 | °C/W | |||
| 8-lead SOIC | θJA | 101 | °C/W | |||
| THERMAL CHARACTERISTICS | ||||||
| Package | ID (Continuous) (mA) | ID (Pulsed) (mA) | Power Dissipation at TA = 25°C (W) | IDR (Note 1) (mA) | IDRM (mA) | |
| 3-lead TO-92 | -180 | -800 | 1 | -180 | -800 | |
| 8-lead SOIC | -86 | -600 | 0.74 (Note 2) | -86 | -600 | |
2410121621_MICROCHIP-TP2640N3-G_C632592.pdf
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