Silicon Carbide MOSFET Megain M2M-0030-120K with High Power Density and Reduced Cooling Requirements
Product Overview
The M2M-0030-120K is a Silicon Carbide Power MOSFET designed for N-Channel Enhancement Mode operation. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. Its avalanche ruggedness and compliance with Halogen Free and RoHS standards make it suitable for applications demanding higher system efficiency, reduced cooling requirements, increased power density, and higher system switching frequencies.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon Carbide
- Color: Not specified
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Part Number | Package | VDSmax (V) | VGSmax (V) | ID (A) TC=25C | ID (A) TC=100C | RDS(on) Max (m) TC=25C | RDS(on) Max (m) Tj=175C | PD (W) TC=25C | TJ, Tstg (C) |
| M2M-0030-120K | TO-247-4 | 1200 | -10/+22 | 76 | 68 | 40 | 48 | 375 | -55 to +175 |
| Part Number | V(BR)DSS (V) | VGS(th) Typ. (V) | IDSS Max (A) | IGSS Max (nA) | gfs Typ. (S) TC=25C | gfs Typ. (S) Tj=175C | Ciss Typ. (pF) | Coss Typ. (pF) | Crss Typ. (pF) | EON Typ. (J) | EOFF Typ. (J) | td(on) Typ. (ns) | tr Typ. (ns) | td(off) Typ. (ns) | tf Typ. (ns) | RG(int) Typ. () | Qgs Typ. (nC) | Qgd Typ. (nC) | Qg Typ. (nC) |
| M2M-0030-120K | 1200 | 2.2 | 50 | 100 | 27 | 17 | 2940 | 129 | 15 | 1616 | 178 | 14 | 31 | 32 | 12 | 2.2 | 34 | 35 | 138 |
| Part Number | VSD Typ. (V) ISD=20A, TJ=25C | VSD Typ. (V) ISD=20A, TJ=175C | IS Typ. (A) TC=25C | trr Typ. (ns) | Irrm Typ. (A) | RJC Typ. (C/W) | RJA Typ. (C/W) |
| M2M-0030-120K | 4.9 | 4.4 | 68 | 61 | 20 | 0.4 | 36 |
2506251635_Megain-M2M-0030-120K_C49242769.pdf
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