Soft recovery diode Minos RHRG30120-MNS 1200V 30A featuring low switching losses and EMI reduction
Key Attributes
Model Number:
RHRG30120-MNS
Product Custom Attributes
Reverse Leakage Current (Ir):
30uA
Reverse Recovery Time (trr):
65ns
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
2.6V@30A
Current - Rectified:
30A
Mfr. Part #:
RHRG30120-MNS
Package:
TO-247-2
Product Description
Product Overview
The FRED Ultrafast Soft Recovery Diode, rated at 1200V and 30A, is engineered to minimize losses and EMI/RFI in high-frequency power conditioning systems. Its soft recovery characteristic provides buffering in various applications, making it suitable for power converters and other scenarios where switching losses are not a primary concern. Key features include ultrafast recovery, a high operating junction temperature of 175, high-frequency operation, low IR value, and high surge capacity, all built on an epitaxial chip construction.
Product Attributes
- Brand: FRED (implied by product name)
- Origin: Shenzhen Minos (implied by contact information)
Technical Specifications
| Parameter | Symbol | Test Conditions | Values | Units |
| Absolute Maximum Ratings | VRRM | 1200 | V | |
| IF(AV) | TA=110 | 30 | A | |
| IFSM | TA=25 | 180 | A | |
| IFRM | Square wave, 20kHZ | 45 | A | |
| Tj | 175 | |||
| Storage Temperatures | Tstg | -55 to +175 | ||
| Electrical Characteristics | VBR | VR=IR=100A | 1200 | V |
| VF | IF=30 A | 2.00 - 2.60 | V | |
| VF | IF=30 A, Tj =125 | 1.75 - 2.30 | V | |
| IR | VR=VRRM | 30 | A | |
| Reverse Leakage Current | IR | Tj=150, VR=1200V | 300 | A |
| Reverse Recovery Time | trr | IF=0.5A, IR=1A, IRR=0.25A | 65 | ns |
| trr | IF=1A,VR=30V, di/dt =200A/us | 35 - 45 | ns | |
| Thermal Characteristics | RthJC | 0.80 | /W |
2506121200_Minos-RHRG30120-MNS_C49108780.pdf
Related Products
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
