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quality SCR MSKSEMI BT137S-600E MS Featuring 8A RMS Current and 600V Repetitive Peak Reverse Voltage Rating factory
quality SCR MSKSEMI BT137S-600E MS Featuring 8A RMS Current and 600V Repetitive Peak Reverse Voltage Rating factory

SCR MSKSEMI BT137S-600E MS Featuring 8A RMS Current and 600V Repetitive Peak Reverse Voltage Rating

Key Attributes
Model Number: BT137S-600E(MS)
Product Custom Attributes
Current - Gate Trigger(Igt):
25mA
Voltage - On State(Vtm):
1.6V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
8A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
65A
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BT137S-600E(MS)
Package:
TO-252
Product Description

Product Overview

The BT137S-XXXE(MS) SCR series from MSKSEMI features a parallel resistor between the Gate and Cathode, making it especially recommended for applications such as straight hair devices, igniters, and anion generators. These SCRs offer reliable performance with key features including an RMS on-state current of 8A and repetitive peak off-state/reverse voltages of 600V or 800V.

Product Attributes

  • Brand: MSKSEMI
  • Series: BT137S-XXXE(MS)
  • Package Type: TO-252

Technical Specifications

Symbol Parameter Value Unit Notes
Absolute Maximum Ratings
Tstg Storage junction temperature range -40-150
Tj Operating junction temperature range -40-125
VDRM Repetitive peak off-state voltage (Tj=25) 600/800 V
VRRM Repetitive peak reverse voltage (Tj=25) 600/800 V
IT(RMS) RMS on-state current (TC=103) 8 A
ITSM Non repetitive surge peak on-state current (full cycle, F=50Hz) 65 A
I2t I2t value for fusing (tp=10ms) 21 A2s
IGM Peak gate current 2 A
dI/dt Critical rate of rise of on-state current (IG=2IGT) 50 (I-II-III) / 10 (IV) A/s
PG(AV) Average gate power dissipation 0.5 W
PGM Peak gate power 5 W
Main Features
IT(RMS) 8 A
VDRM /VRRM 600/800 V
Electrical Characteristics (Tj=25 unless otherwise specified)
IGT Gate trigger current (VD=12V, RL=30) MAX 10 (I-II-III) / 25 (IV) mA
VGT Gate trigger voltage (ALL Quadrants) MAX 1.3 V
VGD Gate non-trigger voltage (VD=VDRM, Tj=125, RL=3.3K, ALL Quadrants) MIN 0.2 V
IL Latching current (IG=1.2IGT) MAX 20 (I-III) / 30 (II-IV) mA
IH Holding current (IT=100mA) MAX 15 mA
dV/dt Critical rate of rise of off-state voltage (VD=2/3VDRM, Gate Open, Tj=125) MIN 50 V/s
Static Characteristics
VTM On-state voltage (ITM=10A, tp=380s, Tj=25) 1.6 (MAX) V
IDRM Off-state current (VD=VDRM, VR=VRRM, Tj=25) 5 (MAX) A
IRRM Reverse leakage current (Tj=125) 1 (MAX) mA
Thermal Resistances
Rth(j-c) Junction to case (AC) 2.1 /W
Rth(j-a) Junction to ambient 70 /W
Package Mechanical Data (TO-252)
P/N PKG QTY
BT137S-XXXE(MS) TO-252 2500
Symbol Dimensions In Millimeters Dimensions In Inches
A 2.200 - 2.400 0.087 - 0.094
A1 0.000 - 0.127 0.000 - 0.005
b 0.635 - 0.770 0.025 - 0.030
c 0.460 - 0.580 0.018 - 0.023
D 6.500 - 6.700 0.256 - 0.264
D1 5.100 - 5.460 0.201 - 0.215
D2 2.900 REF. (0.114 REF.)
E 6.000 - 6.200 0.236 - 0.244
e 2.186 - 2.386 0.086 - 0.094
L 9.712 - 10.312 0.382 - 0.406
L1 4.830 REF. (0.190 REF.)
L2 1.400 - 1.700 0.055 - 0.067
L3 5.250 REF. (0.207 REF.)
L4 0.600 - 1.000 0.024 - 0.039
1.100 - 1.300 0.043 - 0.051
0 - 8 0 - 8
h 0.000 - 0.300 0.000 - 0.012
V 1.600 REF. 0.063 REF.

2404151058_MSKSEMI-BT137S-600E-MS_C22365386.pdf

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