Lateral DMOS transistor MICROCHIP LND150N8-G with drive requirements and ESD gate protection features
Key Attributes
Model Number:
LND150N8-G
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
30mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1kΩ@0V,0.5mA
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1pF
Number:
1 N-channel
Input Capacitance(Ciss):
10pF@10V
Pd - Power Dissipation:
1.6W
Mfr. Part #:
LND150N8-G
Package:
SOT-89
Product Description
Product Description
The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertexs lateral DMOS technology. It features ESD protection on the gate and is ideal for high voltage applications such as normally-on switches, precision constant current sources, voltage ramp generation, and amplification. Key advantages include freedom from secondary breakdown, low power drive requirements, ease of paralleling, excellent thermal stability, an integral source-drain diode, high input impedance, low CISS, and ESD gate protection.
Product Attributes
- Brand: Supertex inc.
- Technology: Lateral DMOS
- Certifications: Lead (Pb)-free / RoHS compliant (-G denotes package)
Technical Specifications
| Part Number | Package Options | BVDSX/BVDGX (V) | RDS(ON) (max) | IDSS (min) | Packing |
| LND150K1-G | TO-236AB (SOT-23) | 500 | 1.0kΩ | 1.0mA | 3000/Reel |
| LND150N3-G | TO-92 | 500 | 1.0kΩ | 1.0mA | 1000/Bag |
| LND150N3-G P002 | TO-92 | 500 | 1.0kΩ | 1.0mA | 2000/Reel |
| LND150N3-G P003 | TO-92 | 500 | 1.0kΩ | 1.0mA | 2000/Reel |
| LND150N3-G P005 | TO-92 | 500 | 1.0kΩ | 1.0mA | 2000/Reel |
| LND150N3-G P013 | TO-92 | 500 | 1.0kΩ | 1.0mA | 2000/Reel |
| LND150N3-G P014 | TO-92 | 500 | 1.0kΩ | 1.0mA | 2000/Reel |
| LND150N8-G | TO-243AA (SOT-89) | 500 | 1.0kΩ | 1.0mA | 2000/Reel |
2410121636_MICROCHIP-LND150N8-G_C629123.pdf
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