drive N Channel MOSFET MICROCHIP VN0550N3 G with integral source drain diode and ease of paralleling
Key Attributes
Model Number:
VN0550N3-G
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
60Ω@10V,50mA
Gate Threshold Voltage (Vgs(th)):
4V
Number:
1 N-channel
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
55pF@25V
Mfr. Part #:
VN0550N3-G
Package:
TO-92-3
Product Description
Product Overview
The VN0550 is an N-Channel Enhancement-mode (normally-off) Vertical DMOS FET utilizing a well-proven silicon-gate manufacturing process. It offers the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally induced secondary breakdown, making it ideal for switching and amplifying applications requiring very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds. Its advantages include freedom from secondary breakdown, low power drive requirements, ease of paralleling, low CISS, fast switching speeds, excellent thermal stability, integral source-drain diode, and high input impedance with high gain.
Product Attributes
- Brand: Microchip Technology Inc.
- Package Type: 3-lead TO-92
Technical Specifications
| Parameter | Sym. | Min. | Typ. | Max. | Unit | Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | BVDSS | V | ||||
| Drain-to-Gate Voltage | BVDGS | V | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | ||
| Operating Ambient Temperature | TA | -55 | 150 | C | ||
| Storage Temperature | TS | -55 | 150 | C | ||
| DC Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | 500 | V | VGS = 0V, ID = 1 mA | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VGS = VDS, ID = 1 mA | |
| Change in VGS(th) with Temperature | VGS(th) | -3.8 | -5 | mV/C | VGS = VDS, ID = 1 mA (Note 1) | |
| Gate Body Leakage Current | IGSS | 100 | nA | VGS = 20V, VDS = 0V | ||
| Zero-Gate Voltage Drain Current | IDSS | 10 | A | VGS = 0V, VDS = Maximum rating | ||
| Zero-Gate Voltage Drain Current | IDSS | 1 | mA | VDS = 0.8 Maximum rating, VGS = 0V, TA = 125C (Note 1) | ||
| On-State Drain Current | ID(ON) | 100 | mA | VGS = 5V, VDS = 25V | ||
| On-State Drain Current | ID(ON) | 150 | 350 | mA | VGS = 10V, VDS = 25V | |
| Static Drain-to-Source On-State Resistance | RDS(ON) | 45 | VGS = 5V, ID = 50 mA | |||
| Static Drain-to-Source On-State Resistance | RDS(ON) | 40 | 60 | VGS = 10V, ID = 50 mA | ||
| Change in RDS(ON) with Temperature | RDS(ON) | 1 | 1.7 | %/C | VGS = 10V, ID = 50 mA (Note 1) | |
| AC Electrical Characteristics | ||||||
| Forward Transconductance | GFS | 50 | 100 | mmho | VDS = 25V, ID = 50 mA | |
| Input Capacitance | CISS | 45 | 55 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |
| Common Source Output Capacitance | COSS | 8 | 10 | pF | ||
| Reverse Transfer Capacitance | CRSS | 2 | 5 | pF | ||
| Turn-On Delay Time | td(ON) | 10 | ns | VDD = 25V, ID = 150 mA, RGEN = 25 | ||
| Rise Time | tr | 15 | ns | |||
| Turn-Off Delay Time | td(OFF) | 10 | ns | |||
| Fall Time | tf | 10 | ns | |||
| Diode Parameter | ||||||
| Diode Forward Voltage Drop | VSD | 0.8 | V | VGS = 0V, ISD = 500 mA (Note 1) | ||
| Reverse Recovery Time | trr | 300 | ns | VGS = 0V, ISD = 500 mA | ||
| Temperature Specifications | ||||||
| Operating Ambient Temperature | TA | -55 | 150 | C | ||
| Storage Temperature | TS | -55 | 150 | C | ||
| Package Thermal Resistance | ||||||
| 3-lead TO-92 | JA | 132 | C/W | |||
| Thermal Characteristics | ||||||
| Power Dissipation at TA = 25C | 1 | W | 3-lead TO-92 | |||
2411220652_MICROCHIP-VN0550N3-G_C632596.pdf
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