Power MOSFET Megain MGP038N10N N channel device featuring low RDS ON and high current for switching
Key Attributes
Model Number:
MGP038N10N
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
RDS(on):
4.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Pd - Power Dissipation:
250W
Output Capacitance(Coss):
609pF
Input Capacitance(Ciss):
4.725nF
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
MGP038N10N
Package:
TO-220
Product Description
Product Overview
The MGP038N10N is an N-channel MOSFET featuring Advanced Trench MOS Technology, offering super low RDS(ON) and 100% EAS Guaranteed. It is suitable for applications such as Motor Drivers, BMS, and high-frequency switching with synchronous rectification. A Green Device version is available.
Product Attributes
- Brand: Megain
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Value | Units | Conditions |
| Product Summary | |||
| VDS | 100 | V | |
| ID | 120 | A | |
| RDS(ON) | <4.5 (Typ: 3.8) | m | VGS=10V |
| Absolute Maximum Ratings | |||
| VDS | 100 | V | TC=25C Unless Otherwise Noted. |
| VGS | 20 | V | TC=25C Unless Otherwise Noted. |
| ID Continuous (TC=25) | 120 | A | TC=25C Unless Otherwise Noted. |
| ID Continuous (TC=100) | 100 | A | TC=100C Unless Otherwise Noted. |
| ID Continuous (TA=25) | 15.6 | A | TA=25C Unless Otherwise Noted. |
| ID Continuous (TA=70) | 12.4 | A | TA=70C Unless Otherwise Noted. |
| IDM Pulsed Drain Current | 480 | A | 2 |
| EAS Single Pulse Avalanche Energy | 702 | mJ | 3 |
| IAS Avalanche Current | 53 | A | |
| PD Total Power Dissipation (TC=25C) | 250 | W | 4 |
| PD Total Power Dissipation (TC=100C) | 100 | W | 4 |
| PD Total Power Dissipation (TA=25C) | 2.0 | W | 4 |
| PD Total Power Dissipation (TA=70C) | 1.3 | W | 4 |
| TSTG Storage Temperature Range | -55 to 150 | ||
| TJ Operating Junction Temperature Range | -55 to 150 | ||
| Thermal Characteristics | |||
| RJA Thermal Resistance Junction to Ambient | 62 | /W | 1 |
| RJC Thermal Resistance Junction to Case | 0.5 | /W | 1 |
| Electrical Characteristics | |||
| BVDSS Drain-Source Breakdown Voltage | 100 | V | VGS=0V, ID=250uA |
| RDS(ON) Drain-Source On-state Resistance | 3.8 (Max: 4.5) | m | VGS=10V, ID=30A, TJ=25C |
| VGS(th) Gate Threshold Voltage | 2 to 4 (Typ: 3) | V | VGS=VDS, ID=250uA, TJ=25C |
| IDSS Drain-Source Leakage Current | 1 | uA | VDS=100V, VGS=0V, TJ=25C |
| IDSS Drain-Source Leakage Current | 10 | uA | VDS=100V, VGS=0V, TJ=55C |
| IGSS Gate-Source Leakage Current | 100 | nA | VGS=20V, VDS=0V, TJ=25C |
| gfs Forward Transconductance | 50 | S | VDS=5V, ID=30A, TJ=25C |
| Rg Gate Resistance | 1 | VDS=0V , VGS=0V , f=1MHz, TJ=25C | |
| Qg Total Gate Charge | 72 | nC | VDS=50V, VGS=10V, ID=20A, TJ=25C |
| Qgs Gate-Source Charge | 28 | nC | VDS=50V, VGS=10V, ID=20A, TJ=25C |
| Qgd Gate-Drain Charge | 15 | nC | VDS=50V, VGS=10V, ID=20A, TJ=25C |
| Td(ON) Turn-on Delay Time | 35 | nS | VDS=50V, VGS=10V, RG=3, ID=20A, TJ=25C |
| Tr Turn-on Rise Time | 18 | nS | VDS=50V, VGS=10V, RG=3, ID=20A, TJ=25C |
| Td(OFF) Turn-off Delay Time | 45 | nS | VDS=50V, VGS=10V, RG=3, ID=20A, TJ=25C |
| Tf Turn-off Fall Time | 55 | nS | VDS=50V, VGS=10V, RG=3, ID=20A, TJ=25C |
| Ciss Input Capacitance | 4725 | pF | VDS=50V, VGS=0V, F=1MHz, TJ=25C |
| Coss Output Capacitance | 609 | pF | VDS=50V, VGS=0V, F=1MHz, TJ=25C |
| Crss Reverse Transfer Capacitance | 14 | pF | VDS=50V, VGS=0V, F=1MHz, TJ=25C |
| Diode Characteristics | |||
| IS Continuous Source Current | 120 | A | VG=VD=0V,Force Current,1,5,6 |
| VSD Diode Forward Voltage | 1.3 | V | VGS=0V, IS=50A, TJ=25C |
| trr Reverse Recovery Time | 70 | nS | IF=30A, dlF/dt=100A/us, TJ=25C |
| Qrr Reverse Recovery Charge | 170 | nC | IF=30A, dlF/dt=100A/us, TJ=25C |
2410121546_Megain-MGP038N10N_C22396271.pdf
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