Silicon N channel MOSFET Minos MLS65R580D Featuring High Pulsed Drain Current and Low Conduction Loss
Key Attributes
Model Number:
MLS65R580D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-
RDS(on):
500mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
3.1pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
410.8pF@25V
Pd - Power Dissipation:
26W
Gate Charge(Qg):
8.6nC@10V
Mfr. Part #:
MLS65R580D
Package:
TO-252
Product Description
Product Overview
The MLS65R580D is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This design minimizes conduction losses and enhances switching performance, making it ideal for high-speed switching applications like Switch Mode Power Supplies (SMPS) and general-purpose uses.
Product Attributes
- Brand: MNS
- Origin: Shenzhen Minos (implied from contact info)
- Material: Silicon (N-channel Enhanced MOSFET)
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Value | Units | Test Conditions |
| Limited Parameters | ||||
| VDSS | Drain-to-Source Breakdown Voltage | 650 | V | |
| ID | Drain Current (continuous) | 8 | A | at TC=25 |
| IDM | Drain Current (pulsed) | 24 | A | |
| VGS | Gate to Source Voltage | 30 | V | |
| Ptot | Total Dissipation | 26 | W | at TC=25 |
| Tj Max. | Operating Junction Temperature | 150 | ||
| Eas | Single Pulse Avalanche Energy | 140 | mJ | |
| Electrical Parameters | ||||
| VDS | Drain-source Voltage | 650 | V | VGS=0V, ID=250A |
| RDS(on) | Static Drain-to-Source on-Resistance | 0.50 | VGS=10V,ID=4.0A | |
| 0.58 | ||||
| VGS(th) | Gated Threshold Voltage | 2 - 4 | V | VDS=VGS, D=250A |
| IDSS | Drain-Source Leakage Current | 1.0 | A | VDS=650V, VGS= 0V |
| IGSS(F) | Gate-Source Forward Leakage | 100 | nA | VGS= +30V |
| IGSS(R) | Gate-Source Reverse Leakage | -100 | nA | VGS= -30V |
| Ciss | Input Capacitance | 410.8 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| Coss | Output Capacitance | 41.7 | pF | |
| Crss | Reverse Transfer Capacitance | 3.1 | pF | |
| Qg | Total Gate Charge | 8.6 | nC | ID =5.0A, VDD =400V, VGS = 10V |
| Qgs | Gate-Source Charge | 2.2 | nC | |
| Qgd | Gate-Drain Charge | 3.8 | nC | |
| td(on) | Turn-on Delay Time | 26.4 | nS | ID =4.0A, VDD =400V, VGS =10 |
| tr | Turn-on Rise Time | 17.9 | nS | |
| td(off) | Turn-off Delay Time | 56.2 | nS | |
| tf | Turn-off Fall Time | 14 | nS | |
| Source-Drain Diode Characteristics | ||||
| IS | Continuous Source Current (Body Diode) | -- | A | TC=25 C |
| ISM | Maximum Pulsed Current (Body Diode) | -- | A | |
| VSD | Diode Forward Voltage | -- | V | ID=8A, VGS=0V(Note4) |
| trr | Reverse Recovery Time | 214.3 | nS | IS=4A, Tj = 25C, dIF/dt=100A/us, VGS=0V |
| Qrr | Reverse Recovery Charge | 1.7 | nC | |
| Package Information | ||||
| Package | TO-252 | |||
| Ordering Code | S65R580D | |||
| Packing | Tube/Reel | |||
2411220027_Minos-MLS65R580D_C19272226.pdf
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