N Channel Vertical DMOS FET MICROCHIP VN2406L G with Fast Switching Speeds and High Input Impedance
Key Attributes
Model Number:
VN2406L-G
Product Custom Attributes
Drain To Source Voltage:
240V
Current - Continuous Drain(Id):
1A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
6Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
800mV
Reverse Transfer Capacitance (Crss@Vds):
20pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
125pF@25V
Pd - Power Dissipation:
1W
Mfr. Part #:
VN2406L-G
Package:
TO-92-3
Product Description
Product Overview
The Supertex VN2406 is an N-Channel Enhancement-Mode Vertical DMOS FET utilizing a silicon-gate manufacturing process. It offers the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally-induced secondary breakdown, making it suitable for various switching and amplifying applications requiring low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds.
Product Attributes
- Brand: Supertex inc.
- Model: VN2406
- Packaging: "Green" Packaging (Pb-free / RoHS compliant)
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Units | Conditions |
| Drain-to-source breakdown voltage | BVDSS | 240 | - | - | V | VGS = 0V, ID = 100A |
| Gate threshold voltage | VGS(th) | 0.8 | - | 2.0 | V | VGS = VDS, ID = 1.0mA |
| Gate body leakage | IGSS | - | - | 100 | nA | VGS = 20V, VDS = 0V |
| Zero gate voltage drain current | IDSS | - | - | 10 | A | VGS = 0V, VDS = 120V |
| Zero gate voltage drain current (TA = 125C) | IDSS | - | - | 500 | A | VGS = 0V, VDS = 120V, TA = 125C |
| On-state drain current | ID(ON) | 1.0 | - | - | A | VGS = 10V, VDS = 15V |
| Static drain-to-source on-state resistance | RDS(ON) | - | - | 10 | VGS = 2.5V, ID = 100mA | |
| Static drain-to-source on-state resistance | RDS(ON) | - | - | 6.0 | VGS = 10V, ID = 500mA | |
| Change in RDS(ON) with temperature | RDS(ON) | - | 1.0 | 1.4 | %/C | VGS = 10V, ID = 500mA |
| Forward transductance | GFS | 300 | - | - | mmho | VDS = 10V, ID = 500mA |
| Input capacitance | CISS | - | - | 125 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| Common source output capacitance | COSS | - | - | 50 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| Reverse transfer capacitance | CRSS | - | - | 20 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz |
| Rise time | tr | - | - | 8.0 | ns | VDD = 60V, ID = 400mA, RGEN = 25 |
| Turn-on delay time | td(ON) | - | - | 8.0 | ns | VDD = 60V, ID = 400mA, RGEN = 25 |
| Fall time | tf | - | - | 24 | ns | VDD = 60V, ID = 400mA, RGEN = 25 |
| Turn-off delay time | td(OFF) | - | - | 23 | ns | VDD = 60V, ID = 400mA, RGEN = 25 |
| Diode forward voltage drop | VSD | - | 1.2 | - | V | VGS = 0V, ISD = 800mA |
| Continuous Drain Current | ID (continuous) | - | - | 190 | mA | TC = 25OC |
| Pulsed Drain Current | ID (pulsed) | - | - | 1.7 | A | TC = 25OC |
| Power Dissipation | PD | - | - | 1.0 | W | TC = 25OC |
2411220146_MICROCHIP-VN2406L-G_C632603.pdf
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