Nexperia BC847BW115 transistor offering 200 minimum gain and 45 volt VCEO in compact SOT323 SC70 package
Key Attributes
Model Number:
BC847BW,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC847BW,115
Package:
SOT-323
Product Description
Product Overview
The Nexperia BC847xW series comprises NPN general-purpose transistors designed for a wide range of switching and amplification applications. These transistors are housed in a very small SOT323 (SC-70) surface-mounted device (SMD) plastic package, offering three distinct gain selections for versatile use. With a collector-emitter voltage of 45 V and a collector current of 100 mA, they provide reliable performance in compact electronic designs.
Product Attributes
- Brand: Nexperia
- Package Type: SOT323 (SC-70)
- Material: Plastic
- Technology: NPN General-purpose transistor
Technical Specifications
| Model | PNP Complement | Package | VCEO (V) | IC (mA) | hFE (min) | hFE (typ) | hFE (max) | Marking Code |
|---|---|---|---|---|---|---|---|---|
| BC847W | BC857W | SOT323 (SC-70) | 45 | 100 | 110 | - | 800 | 1H% |
| BC847AW | BC857AW | SOT323 (SC-70) | 45 | 100 | 110 | 180 | 220 | 1E% |
| BC847BW | BC857BW | SOT323 (SC-70) | 45 | 100 | 200 | 290 | 450 | 1F% |
| BC847CW | BC857CW | SOT323 (SC-70) | 45 | 100 | 420 | 520 | 800 | 1G% |
Key Characteristics (Tamb = 25 C unless otherwise specified)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 45 | V |
| IC | Collector current | - | - | - | 100 | mA |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 6 | V |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | 200 | mA |
| IBM | Peak base current | Single pulse; tp 1 ms | - | - | 100 | mA |
| Ptot | Total power dissipation | Tamb 25 C | - | - | 200 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance junction to ambient | In free air [1] | - | - | 625 | K/W |
| V(BR)CES | Collector-emitter breakdown voltage | IC = 2 mA; VBE = 0 A | 45 | - | - | V |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA [1] | - | 700 | - | mV |
| VBEsat | Base-emitter saturation voltage | IC = 100 mA; IB = 5 mA [2] | - | 900 | - | mV |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz | 100 | - | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 1.5 | pF |
| Ce | Emitter capacitance | VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz | - | 11 | - | pF |
| NF | Noise figure | IC = 200 A; VCE = 5 V; RS = 2 k; f = 1 kHz; B = 200Hz | - | 2 | 10 | dB |
[1] Pulsed; tp 300 s; 0.02
[2] VBE decreases by approximately 2 mV/K with increasing temperature
[3] Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint.
2410010302_Nexperia-BC847BW-115_C8659.pdf
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