High Current Silicon MOSFET Minos MD70N30 Suitable for General Purpose and High Frequency Switching
Key Attributes
Model Number:
MD70N30
Product Custom Attributes
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
70A
RDS(on):
32mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
49pF
Number:
1 N-channel
Input Capacitance(Ciss):
9.55nF
Output Capacitance(Coss):
895pF
Pd - Power Dissipation:
430W
Gate Charge(Qg):
155nC@10V
Mfr. Part #:
MD70N30
Package:
TO-3P
Product Description
Product Overview
The MD70N30 is a silicon N-Channel Enhanced MOSFET designed for high-frequency switching applications. It offers reduced conduction loss, improved switching performance, and enhanced avalanche energy, making it suitable for SMPS, high-speed switching, and general-purpose applications. This RoHS-compliant product is available in a TO-3P package.
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen, China
- Certifications: RoHS
Technical Specifications
| Parameter | Value | Units | Conditions |
| General Features | |||
| VDS | 300 | V | |
| ID | 70 | A | |
| RDS(ON) | <41 | m | VGS=10V |
| Absolute Maximum Ratings | |||
| VDSS | 300 | V | |
| ID | 70 | A | (TC = 25C) |
| ID | 42.3 | A | (TC = 100 C) |
| IDM | 249 | A | Pulsed Drain Current(Note1) |
| VGS | 30 | V | |
| EAS | 2800 | mJ | Single Pulse Avalanche Energy(Note2) |
| dv/dt | 5.0 | V/ns | Peak Diode Recovery dv/dt(Note3) |
| PD | 430 | W | TO-247 |
| TJ, Tstg | 55 to 150 | Operating Junction and Storage Temperature Range | |
| TL | 300 | Maximum Temperature for Soldering | |
| Thermal Characteristics | |||
| RJC | 0.29 | /W | Junction-to-Case |
| RJA | 40 | /W | Junction-to-Ambient |
| Electrical Characteristics (OFF Characteristics) | |||
| VDSS | 300 | V | VGS=0V, ID=250A |
| BVDSS/TJ | 0.25 | V/ | Bvdss Temperature Coefficient (ID=250uA, Reference 25) |
| IDSS | 1 | A | VDS=300V, VGS=0V, Tj = 25 |
| IDSS | 10 | A | VDS =240V, VGS=0V, Tj = 125 |
| IGSS(F) | 100 | nA | Gate to Source Forward Leakage (VGS=+30V) |
| IGSS(R) | 100 | nA | Gate to Source Reverse Leakage (VGS=-30V) |
| Electrical Characteristics (ON Characteristics) | |||
| RDS(ON) | 32 | m | VGS=10V, ID=29.5A(Note4) |
| RDS(ON) | 41 | m | VGS=10V, ID=29.5A(Note4) |
| VGS(TH) | 2.0 | V | VDS = VGS, ID = 250A(Note4) |
| VGS(TH) | 4.0 | V | VDS = VGS, ID = 250A(Note4) |
| gfs | 52 | S | VDS=15V, ID =40A(Note4) |
| Dynamic Characteristics | |||
| Rg | 0.85 | Gate resistance (f = 1.0MHz) | |
| Ciss | 9550 | PF | Input Capacitance (VGS = 0V, VDS=25V, f=1.0MHz) |
| Coss | 895 | PF | Output Capacitance (VGS = 0V, VDS=25V, f=1.0MHz) |
| Crss | 49 | PF | Reverse Transfer Capacitance (VGS = 0V, VDS=25V, f=1.0MHz) |
| Switching Characteristics | |||
| td(ON) | 160 | ns | Turn-on Delay Time (ID =70A, VDD=150V, VGS= 10V, RG =20) |
| tr | 550 | ns | Rise Time (ID =70A, VDD=150V, VGS= 10V, RG =20) |
| td(OFF) | 122 | ns | Turn-off Delay Time (ID =70A, VDD=150V, VGS= 10V, RG =20) |
| tf | 198 | ns | Fall Time (ID =70A, VDD=150V, VGS= 10V, RG =20) |
| Qg | 155 | nC | Total Gate Charge (ID =70A, VDD=240V, VGS = 10V) |
| Qgs | 46 | nC | Gate to Source Charge (ID =70A, VDD=240V, VGS = 10V) |
| Qgd | 40 | nC | Gate to Drain (Miller)Charge (ID =70A, VDD=240V, VGS = 10V) |
| Source-Drain Diode Characteristics | |||
| IS | 70 | A | Continuous Source Current (Body Diode) (TC=25 C) |
| ISM | 42.3 | A | Maximum Pulsed Current (Body Diode) |
| VSD | 1.2 | V | Diode Forward Voltage (IS=70A, VGS=0V(Note4)) |
| Trr | 236 | ns | Reverse Recovery Time (IS=70A, Tj = 25C, dIF/dt=100A/us, VGS=0V) |
| Qrr | 6879 | nC | Reverse Recovery Charge (IS=70A, Tj = 25C, dIF/dt=100A/us, VGS=0V) |
| Irrm | 58.3 | A | Reverse Recovery Current (IS=70A, Tj = 25C, dIF/dt=100A/us, VGS=0V) |
2506121200_Minos-MD70N30_C49108788.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
