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quality Nexperia BCX56-16 115 NPN Medium Power Transistor Featuring High Collector Current and Gain Ratings factory
quality Nexperia BCX56-16 115 NPN Medium Power Transistor Featuring High Collector Current and Gain Ratings factory

Nexperia BCX56-16 115 NPN Medium Power Transistor Featuring High Collector Current and Gain Ratings

Key Attributes
Model Number: BCX56-16,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.35W
Transition Frequency(fT):
180MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BCX56-16,115
Package:
SOT-89
Product Description

Product Overview

The Nexperia BCX56 series comprises NPN medium power transistors designed for surface-mounting applications. Housed in a SOT89 (SC-62) plastic package, these transistors offer high collector current capability (IC and ICM), multiple current gain selections, and high power dissipation. They are suitable for a range of applications including linear voltage regulators, MOSFET drivers, low-side switches, battery-driven devices, power management, and amplifiers.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT89 (SC-62)
  • Transistor Type: NPN Medium Power

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - 80 V
IC Collector current - - - 1 A
ICM Peak collector current single pulse; tp 1 ms - - 2 A
hFE DC current gain VCE = 2 V; IC = 150 mA 63 - 250 -
BCX56 [1] 63 - 250 -
BCX56-10 [1] 63 - 160 -
BCX56-16 VCE = 2 V; IC = 150 mA [1] 100 - 250 -
VCBO Collector-base voltage open emitter - - 100 V
VEBO Emitter-base voltage open collector - - 5 V
IB Base current - - - 0.3 A
IBM Peak base current single pulse; tp 1 ms - - 0.3 A
Ptot Total power dissipation Tamb 25 C [1] - - 0.50 W
[2] - - 0.95 W
[3] - - 1.35 W
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -55 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient [1] - - 250 K/W
[2] - - 132 K/W
[3] - - 93 K/W
R(j-sp) Thermal resistance from junction to solder point in free air - - 16 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A 100 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A 80 - - V
V(BR)EBO Emitter-base breakdown voltage IE = 100 A; IC = 0 A 5 - - V
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A - - 100 nA
VCB = 30 V; IE = 0 A; Tj = 150 C - - 10 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA
hFE DC current gain VCE = 2 V; IC = 5 mA 63 - - -
VCE = 2 V; IC = 150 mA 63 - 250 -
VCE = 2 V; IC = 500 mA [1] 40 - - -
VCEsat Collector-emitter saturation voltage IC = 500 mA; IB = 50 mA [1] - - 0.5 V
VBE Base-emitter voltage VCE = 2 V; IC = 500 mA [1] - - 1 V
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - 6 - pF
fT Transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz 100 180 - MHz

[1] Pulsed; tp 300 s; 0.02

[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm.

[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 6 cm.


2410010301_Nexperia-BCX56-16-115_C100026.pdf

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