Low voltage P channel transistor MICRONE MEM2301XG with compact SOT23 package and minimal power loss
Key Attributes
Model Number:
MEM2301XG
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
RDS(on):
110mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
580mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 P-Channel
Input Capacitance(Ciss):
500pF
Output Capacitance(Coss):
115pF
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
MEM2301XG
Package:
SOT-23
Product Description
Product Overview
The MEM2301XG Series is a P-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology to minimize on-state resistance. This device is particularly suited for low voltage applications, offering low power dissipation in a subminiature surface mount package (SOT23). Key features include -20V/-2.8A rating, low RDS(ON) values, and a high-density cell design for ultra-low on-resistance.
Product Attributes
- Brand: Microne
- Origin: www.microne.com.cn
- Package: SOT23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 8 | V | |||
| Continuous Drain Current | ID | TA=25 | -2.8 | A | ||
| TA=70 | -1.8 | A | ||||
| Pulsed Drain Current | IDM | 1,2 | -10 | A | ||
| Total Power Dissipation | PD | TA=25 | 0.7 | W | ||
| TA=70 | 0.45 | W | ||||
| Operating Temperature Range | TOpr | 150 | ||||
| Storage Temperature Range | Tstg | -65 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -20 | -23 | V | |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250A | -0.4 | -0.58 | -1 | V |
| Gate-Body Leakage | IGSS | VDS=0VVGS=8V | 0.2 | 100 | nA | |
| VDS=0VVGS=-8V | -0.2 | -100 | nA | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-16V VGS=0V | -1.5 | -100 | nA | |
| Static Drain-Source On-Resistance | RDS(ON)1 | VGS=-4.5V,ID=-2.8A | 93 | 110 | m | |
| RDS(ON)2 | VGS=-2.5V,ID=-2A | 113 | 140 | m | ||
| Forward Transconductance | gFS | VDS = 5 V, ID = 2.8 A | 6.5 | S | ||
| Source-drain (diode forward) voltage | VSD | VGS=0V,IS=-1A | -1.2 | V | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = -6V, VGS = 0 V, f = 1 MHz | 500 | pF | ||
| Output Capacitance | Coss | 115 | pF | |||
| Reverse Transfer Capacitance | Crss | 60 | pF | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD = -6 V, ID=-1 A, VGEN = -4.5 V, Rg = 6 | 5 | 25 | ns | |
| Rise Time | tr | 30 | 60 | ns | ||
| Turn-Off Delay Time | td(off) | 25 | 60 | ns | ||
| Fall-Time | tf | 10 | 60 | ns | ||
| Total Gate Charge | Qg | VDS = -6 V, VGS = -4.5 V, ID = -2.8A | 4.0 | 10 | nC | |
| Gate-Source Charge | Qgs | 0.8 | nC | |||
| Gate-Drain Charge | Qg d | 0.8 | nC | |||
2410121308_MICRONE-MEM2301XG_C82937.pdf
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