Nexperia PBSS4140T 215 NPN transistor 40V 1A low VCEsat in SOT23 package for general purpose switching

Key Attributes
Model Number: PBSS4140T,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
450mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
PBSS4140T,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PBSS4140T is a 40 V, 1 A NPN low VCEsat (BISS) transistor housed in a compact SOT23 plastic package. Designed for general-purpose switching and muting, it offers high current capabilities and improved device reliability due to reduced heat generation. Its applications include LCD backlighting, supply line switching circuits, and battery-driven equipment such as mobile phones, video cameras, and hand-held devices. The PNP complement is the PBSS5140T.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT23
  • Transistor Type: NPN
  • Technology: BISS (Low VCEsat)

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - 40 V
ICM Peak collector current Single pulse; tp 1 ms - - 2 A
RCEsat Collector-emitter saturation resistance IC = 500 mA; IB = 50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 260 500 m
VCBO Collector-base voltage Open emitter - - 40 V
VEBO Emitter-base voltage Open collector - - 5 V
IC Collector current - - - 1 A
IBM Peak base current Single pulse; tp 1 ms - - 1 mA
Ptot Total power dissipation Tamb 25 C [1] - 300 - mW
Ptot Total power dissipation Tamb 25 C [2] - 450 - mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient In free air [1] - - 417 K/W
Rth(j-a) Thermal resistance from junction to ambient In free air [2] - - 278 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 40 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 40 - - V
V(BR)EBO Emitter-base breakdown voltage (collector open) IE = 100 A; IC = 0 A; Tamb = 25 C 5 - - V
ICBO Collector-base cut-off current VCB = 40 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICBO Collector-base cut-off current VCB = 40 V; IE = 0 A; Tamb = 150 C - - 50 A
ICEO Collector-emitter cut-off current (base open) IB = 0 A; VCE = 30 V; Tamb = 25 C - - 100 nA
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 100 nA
ICES Collector-emitter cut-off current VCE = 30 V; Tamb = 25 C - - 100 nA
VCE Collector-emitter saturation voltage VCE = 5 V; IC = 1 mA; Tamb = 25 C 300 - - mV
VCE Collector-emitter saturation voltage VCE = 5 V; IC = 500 mA; Tamb = 25 C 300 - 900 mV
hFE DC current gain VCE = 5 V; IC = 1 A; Tamb = 25 C 200 - - -
VCEsat Collector-emitter saturation voltage IC = 100 mA; IB = 1 mA; Tamb = 25 C - - 200 mV
VCEsat Collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; Tamb = 25 C - - 250 mV
VCEsat Collector-emitter saturation voltage IC = 1 A; IB = 100 mA; Tamb = 25 C - - 500 mV
RCEsat Collector-emitter saturation resistance IC = 500 mA; IB = 50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 260 500 m
VBEsat Base-emitter saturation voltage IC = 1 A; IB = 100 mA; Tamb = 25 C - - 1.2 V
VBEon Base-emitter turn-on voltage VCE = 5 V; IC = 1 A; Tamb = 25 C - - 1.1 V
fT Transition frequency VCE = 10 V; IC = 50 mA; f = 100 MHz; Tamb = 25 C 150 - - MHz
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 10 pF

[1] Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated, mounting pad for collector 1 cm.


2410121952_Nexperia-PBSS4140T-215_C82254.pdf

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