Diode Full Bridge Power Module MICROCHIP APTDF200H60G with Symmetrical Design and M5 Power Connectors
Key Attributes
Model Number:
APTDF200H60G
Product Custom Attributes
Operating Junction Temperature Range:
-40℃~+175℃@(Tj)
Voltage - Forward(Vf@If):
2V@200A
Current - Rectified:
270A
Voltage - DC Reverse(Vr):
600V
Mfr. Part #:
APTDF200H60G
Product Description
Product Overview
The APTDF200H60G is a Diode Full Bridge Power Module designed for high-frequency applications. It features ultra-fast recovery times, soft recovery characteristics, high blocking voltage, and high current capabilities, making it suitable for demanding applications like Uninterruptible Power Supplies (UPS), induction heating, and welding equipment. Its symmetrical design and M5 power connectors contribute to very low stray inductance and direct mounting to heatsinks for efficient thermal management.
Product Attributes
- Brand: Microsemi
- Certifications: RoHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VR | Maximum DC reverse Voltage | 600 | V | |||
| VRRM | Maximum Peak Repetitive Reverse Voltage | 600 | V | |||
| IF(AV) | Maximum Average Forward Current | Duty cycle = 50%, TC = 80C | 200 | A | ||
| IF(RMS) | RMS Forward Current | Duty cycle = 50%, TC = 45C | 270 | A | ||
| IFSM | Non-Repetitive Forward Surge Current | 8.3ms, TC = 45C | 1500 | A | ||
| Electrical Characteristics | ||||||
| VF | Diode Forward Voltage | IF = 200A, TC = 25C | 1.6 | 2.0 | V | |
| VF | Diode Forward Voltage | IF = 400A, TC = 25C | 2.0 | V | ||
| VF | Diode Forward Voltage | IF = 200A, Tj = 125C | 1.3 | V | ||
| IRM | Maximum Reverse Leakage Current | VR = 600V, Tj = 25C | 350 | A | ||
| IRM | Maximum Reverse Leakage Current | VR = 600V, Tj = 125C | 600 | A | ||
| CT | Junction Capacitance | VR = 600V | 380 | pF | ||
| Dynamic Characteristics | ||||||
| trr | Reverse Recovery Time | IF=1A,VR=30V, di/dt = 200A/s, Tj = 25C | 34 | ns | ||
| trr | Reverse Recovery Time | Tj = 125C | 160 | 220 | ns | |
| Qrr | Reverse Recovery Charge | Tj = 25C | 580 | nC | ||
| Qrr | Reverse Recovery Charge | Tj = 125C | 3060 | nC | ||
| IRRM | Reverse Recovery Current | IF = 200A, VR = 400V, di/dt = 200A/s, Tj = 125C | 10 | A | ||
| trr | Reverse Recovery Time | IF = 200A, VR = 400V, di/dt = 2000A/s, Tj = 125C | 100 | ns | ||
| Qrr | Reverse Recovery Charge | IF = 200A, VR = 400V, di/dt = 2000A/s, Tj = 125C | 5.78 | C | ||
| IRRM | Reverse Recovery Current | IF = 200A, VR = 400V, di/dt = 2000A/s, Tj = 125C | 88 | A | ||
| Thermal and Package Characteristics | ||||||
| RthJC | Junction to Case Thermal Resistance | 0.285 | C/W | |||
| VISOL | RMS Isolation Voltage, any terminal to case | t =1 min, 50/60Hz | 4000 | V | ||
| TJ | Operating junction temperature range | -40 | 175 | C | ||
| TSTG | Storage Temperature Range | -40 | 125 | C | ||
| TC | Operating Case Temperature | To heatsink | -40 | 100 | C | |
| Mounting torque | For terminals | M6 | 3 | 5 | N.m | |
| Mounting torque | For terminals | M5 | 2 | 3.5 | N.m | |
| Wt | Package Weight | 300 | g | |||
2504101957_MICROCHIP-APTDF200H60G_C17572706.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
