MEM2N60A3G power mosfet n channel device engineered for high voltage switching and regulator circuit

Key Attributes
Model Number: MEM2N60A3G
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
-
Output Capacitance(Coss):
61pF
Input Capacitance(Ciss):
347pF
Pd - Power Dissipation:
41W
Gate Charge(Qg):
7.84nC@10V
Mfr. Part #:
MEM2N60A3G
Package:
TO-220F(TO-220IS)
Product Description

Product Overview

The MEM2N60 is a N-channel Power MOSFET designed for high voltage and high-speed switching applications. It offers features such as low CRSS and fast switching, making it suitable for switching regulator applications.

Product Attributes

  • Brand: Microne
  • Origin: China (www.microne.com.cn)

Technical Specifications

ParameterSymbolRatingsUnitTest ConditionMinTypeMax
Maximum RatingsVDSS600V
VGSS±30V
ID (TA=25)2A
ID (TA=100)1.2A
IDM8APulse1,2
Pd (TA=25)41W
TOpr-55-150
Tstg-55-150
Electrical CharacteristicsV(BR)DSS600VVGS=0V, ID=250uA600650-
VGS(th)2.0VVDS= VGS, ID=250uA2.0-4.0
IGSS (VGS=30V)-0.8100nAVDS=0V
IGSS (VGS=-30V)--4-100nAVDS=0V
IDSS-0.820uAVDS=600V VGS=0V
RDS(ON)-3.84.5ΩVGS=10V, ID=1A
gFS-210SVDS =15V, ID= 1A
Is--2AVGS=0V
VSD0.851.4VVGS=0V,IS=2A
Dynamic CharacteristicsCiss-347-pFVDS = 25 V, VGS = 0 V, f = 1 MHz
Coss-61-pF
Crss-16-pF
Switching Characteristicstd(on)-19.4-nsVDD = 300 V, RG = 10Ω VGS = 10V, ID = 2A
tr-7.74-ns
td(off)-28.7-ns
tf-9.3-ns
Gate ChargeQg7.84-nCVDS = 300V, VGS = 10V, ID = 2A
Qgs-1.91-nC
Qgd-3-nC
Thermal CharacteristicsRθJCTYP. 2.5MAX. 3°C/W

2309191723_MICRONE-MEM2N60A3G_C107690.pdf

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