PNP matched double transistors Nexperia BCM857DS 135 for in wearable consumer and computing devices
Key Attributes
Model Number:
BCM857DS,135
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
175MHz
Type:
PNP
Number:
2 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BCM857DS,135
Package:
TSOP-6
Product Description
Product Overview
The Nexperia BCM857 series comprises PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. These fully isolated internal transistors offer excellent current gain (hFE) and base-emitter voltage (VBE) matching, making them ideal for applications such as current mirrors and differential amplifiers. They serve as direct replacements for standard double transistors.
Product Attributes
- Brand: Nexperia
- Product Type: PNP/PNP Matched Double Transistors
- Technology: Discrete, Logic, PowerMOS semiconductors
- Application Markets: Automotive, Industrial, Computing, Consumer, Wearable
Technical Specifications
| Type Number | Package | NPN/NPN Complement | Matched Version of | Marking Code |
|---|---|---|---|---|
| BCM857BV | SOT666 | BCM847BV | NXP JEITA | 3B |
| BCM857BS | SOT363 (SC-88) | BCM847BS | BC857BS | A9* |
| BCM857DS | SOT457 (SC-74) | - | BC847DS | R8 |
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | -45 | V |
| IC | Collector current | - | - | - | -100 | mA |
| hFE | DC current gain | VCE = -5 V; IC = -2 mA | 200 | 290 | 450 | - |
| VCBO | Collector-base voltage | Open emitter | - | - | -50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | -5 | V |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | -200 | mA |
| Ptot | Total power dissipation | Tamb 25 C (SOT666/SOT363) | - | - | 200 | mW |
| Ptot | Total power dissipation | Tamb 25 C (SOT457) | - | - | 250 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | In free air (SOT666/SOT363) | - | - | 625 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | In free air (SOT457) | - | - | 500 | K/W |
| ICBO | Collector-base cut-off current | VCB = -30 V; IE = 0 A | - | - | -15 | nA |
| ICBO | Collector-base cut-off current | VCB = -30 V; IE = 0 A; Tj = 150 C | - | - | -5 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -100 | nA |
| hFE | DC current gain | VCE = -5 V; IC = -10 A | - | 250 | - | - |
| hFE | DC current gain | VCE = -5 V; IC = -2 mA | 200 | 290 | 450 | - |
| VCEsat | Collector-emitter saturation voltage | IC = -10 mA; IB = -0.5 mA | - | -50 | -200 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = -100 mA; IB = -5 mA | - | -200 | -400 | mV |
| VBEsat | Base-emitter saturation voltage | IC = -10 mA; IB = -0.5 mA | - | -760 | - | mV |
| VBEsat | Base-emitter saturation voltage | IC = -100 mA; IB = -5 mA | - | -920 | - | mV |
| VBE | Base-emitter voltage | VCE = -5 V; IC = -2 mA | -600 | -650 | -700 | mV |
| VBE | Base-emitter voltage | VCE = -5 V; IC = -10 mA | - | - | -760 | mV |
| Cc | Collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | - | 2.2 | pF |
| Ce | Emitter capacitance | VEB = -0.5 V; IC = ic = 0 A; f = 1 MHz | - | 10 | - | pF |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz | 100 | 175 | - | MHz |
| NF | Noise figure | VCE = -5 V; IC = -0.2 mA; RS = 2 k; f = 10 Hz to 15.7 kHz | - | 1.6 | - | dB |
| NF | Noise figure | VCE = -5 V; IC = -0.2 mA; RS = 2 k; f = 1 kHz; B = 200 Hz | - | 3.1 | - | dB |
| Per device | ||||||
| hFE1/hFE2 | hFE matching | VCE = -5 V; IC = -2 mA | 0.9 | 1 | - | - |
| VBE1VBE2 | VBE matching | VCE = -5 V; IC = -2 mA | - | - | 2 | mV |
| Ptot | Total power dissipation | Tamb 25 C (SOT666/SOT363) | - | - | 300 | mW |
| Ptot | Total power dissipation | Tamb 25 C (SOT457) | - | - | 380 | mW |
| Rth(j-a) | Thermal resistance from junction to ambient | In free air (SOT666/SOT363) | - | - | 416 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | In free air (SOT457) | - | - | 328 | K/W |
Applications
- Current mirror
- Differential amplifier
Package Outline
Refer to the following figures for package dimensions:
- Figure 11: Package outline SOT666
- Figure 12: Package outline SOT363 (SC-88)
- Figure 13: Package outline SOT457 (SC-74)
Packing Information
| Type Number | Package | Packing Quantity (Pieces) |
|---|---|---|
| BCM857BV | SOT666 | 3000, 4000, 8000, 10000 |
| BCM857BS | SOT363 | 3000, 4000, 8000, 10000 |
| BCM857DS | SOT457 | 3000, 4000, 8000, 10000 |
Soldering Information
Reow soldering is the only recommended soldering method. Refer to the following figures for soldering footprints:
- Figure 14: Reow soldering footprint SOT666
- Figure 15: Reow soldering footprint SOT363 (SC-88)
- Figure 17: Reow soldering footprint SOT457 (SC-74)
- Figure 16: Wave soldering footprint SOT363 (SC-88)
- Figure 18: Wave soldering footprint SOT457 (SC-74)
Contact Information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
2410121732_Nexperia-BCM857DS-135_C549565.pdf
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