Soft recovery diode MICROCHIP APT40DQ120BG with low forward voltage drop and avalanche energy rating

Key Attributes
Model Number: APT40DQ120BG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
210A
Reverse Leakage Current (Ir):
100uA@1.2kV
Reverse Recovery Time (trr):
350ns
Diode Configuration:
-
Voltage - DC Reverse (Vr) (Max):
1.2kV
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - Forward(Vf@If):
3.3V@40A
Current - Rectified:
40A
Mfr. Part #:
APT40DQ120BG
Package:
TO-247
Product Description

Product Overview

The APT40DQ120BG is an ultrafast soft recovery rectifier diode designed for high-frequency switching applications. It offers features such as ultrafast recovery times, soft recovery characteristics, low forward voltage, low leakage current, and avalanche energy rating. These attributes translate to benefits like higher switching frequency, reduced switching losses, lower electromagnetic interference (EMI), improved system reliability, and increased power density. The device is suitable for applications including power factor correction (PFC), switch-mode power supplies, inverters/converters, motor controllers, and as anti-parallel, freewheeling, or snubber/clamp diodes.

Product Attributes

  • Brand: Microsemi
  • Certifications: RoHS compliant, AEC-Q101 qualified

Technical Specifications

SymbolParameterTest ConditionsMinTypMaxUnit
Absolute Maximum Ratings
VRMaximum DC reverse voltage1200V
VRRMMaximum peak repetitive reverse voltage1200V
VRWMMaximum working peak reverse voltage1200V
IF(AV)Maximum average forward currentTC = 112 C, duty cycle = 0.540A
IF(RMS)RMS forward current63A
IFSMNon-repetitive forward surge currentTJ = 45 C, 8.3 ms210
EAVLAvalanche energy1 A, 40 mH20mJ
TJ, TSTGOperating and storage temperature range55175C
TLLead temperature for 10 seconds300C
Thermal and Mechanical Characteristics
RJCJunction-to-case thermal resistance0.61C/W
WTPackage weight0.22oz
Package weight5.9g
TorqueMaximum mounting torque10lb-in
TorqueMaximum mounting torque1.1N-m
Static Characteristics
VFForward voltageIF = 30 A2.83.3V
VFForward voltageIF = 60 A3.4V
VFForward voltageIF = 30 A, TJ = 125 C2.1V
IRMMaximum reverse leakage currentVR = 1200 V100A
IRMMaximum reverse leakage currentVR = 1200 V, TJ = 125 C500A
CJJunction capacitanceVR = 200 V36pF
Dynamic Characteristics
trrReverse recovery timeIF = 1 A, di/dt = 100 A/s, VR = 30 V, TJ = 25 C26ns
trrReverse recovery timeIF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 25 C350ns
QrrReverse recovery chargeIF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 25 C570nC
IRRMMaximum reverse recovery currentIF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 25 C4A
trrReverse recovery timeIF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 125 C430ns
QrrReverse recovery chargeIF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 125 C2200nC
IRRMMaximum reverse recovery currentIF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 125 C9A
trrReverse recovery timeIF = 40 A, di/dt = 1000 A/s, VR = 800 V, TJ = 125 C210ns
QrrReverse recovery chargeIF = 40 A, di/dt = 1000 A/s, VR = 800 V, TJ = 125 C3400nC
IRRMMaximum reverse recovery currentIF = 40 A, di/dt = 1000 A/s, VR = 800 V, TJ = 125 C29A

2410122030_MICROCHIP-APT40DQ120BG_C7471641.pdf

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