N channel power mosfet Minos IRFP260N optimized for in uninterruptible power supplies and smps systems
Key Attributes
Model Number:
IRFP260N
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
50mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.538nF
Pd - Power Dissipation:
250W
Gate Charge(Qg):
244nC
Mfr. Part #:
IRFP260N
Package:
TO-247
Product Description
Product Description
The IRFP260N is a silicon N-Channel Enhanced Power MOSFET utilizing advanced technology to reduce conduction losses, improve switching performance, and enhance avalanche energy. This transistor is ideal for applications requiring high-speed switching and general-purpose power management, including Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) circuits.
Product Attributes
- Brand: mns-kx.com
- Product Code: IRFP260N
- Package: TO-247
- Origin: Shenzhen Minos ()
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 200 | V |
| Continuous Drain Current | ID | TC = 25C | 50 | A |
| Pulsed Drain Current | IDM | 200 | A | |
| Gate-Source Voltage | VGSS | ±20 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 25A | Typ:40, Max:50 | mΩ |
| Single Pulse Avalanche Energy | EAS | 780 | mJ | |
| Power Dissipation | PD | TC = 25C | 250 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 175 | C | |
| Thermal Resistance, Junction-to-Case | RthJC | 0.5 | °C/W | |
| Zero Gate Voltage Drain Current | IDSS | VDS = 200V, VGS= 0V, TJ= 25°C | 1 (Max) | μA |
| Gate-Source Leakage | IGSS | VGS = ±20V,VDS=0V | ±100 (Max) | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250μA | 2.0 - 4.0 | V |
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1.0MHz | 3538 (Typ) | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 25V, f = 1.0MHz | 657 (Typ) | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 25V, f = 1.0MHz | 280 (Typ) | pF |
| Total Gate Charge | Qg | VDD=160V, ID = 25A, VGS = 0 to 10V | 244 (Typ) | nC |
| Turn-on Delay Time | td(on) | VDD = 100V, ID=25A, VGS= 10V, RG = 25 Ω | 53 (Typ) | ns |
| Turn-on Rise Time | tr | VDD = 100V, ID=25A, VGS= 10V, RG = 25 Ω | 65 (Typ) | ns |
| Turn-off Delay Time | td(off) | VDD = 100V, ID=25A, VGS= 10V, RG = 25 Ω | 689 (Typ) | ns |
| Turn-off Fall Time | tf | VDD = 100V, ID=25A, VGS= 10V, RG = 25 Ω | 230 (Typ) | ns |
| Continuous Body Diode Current | IS | TC = 25°C | 50 | A |
| Pulsed Diode Forward Current | ISM | 200 | A | |
| Body Diode Voltage | VSD | TJ = 25°C, ISD= 25A, VGS = 0V | 1.5 (Max) | V |
| Reverse Recovery Time | trr | VGS = 0V,IS = 25A, diF/dt=100A /μs | 208 (Typ) | ns |
| Reverse Recovery Charge | Qrr | VGS = 0V,IS = 25A, diF/dt=100A /μs | 2.04 (Typ) | μC |
2410010300_Minos-IRFP260N_C33129608.pdf
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